Allicdata Part #: | IPU60R1K0CEAKMA1-ND |
Manufacturer Part#: |
IPU60R1K0CEAKMA1 |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V TO-251-3 |
More Detail: | N-Channel 600V 4.3A (Tc) Through Hole PG-TO251 |
DataSheet: | IPU60R1K0CEAKMA1 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.20216 |
Series: | CoolMOS™ CE |
Packaging: | Tube |
Part Status: | Last Time Buy |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 4.3A (Tc) |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 130µA |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 100V |
FET Feature: | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO251 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IPU60R1K0CEAKMA1 device is a special type of transistor known as a field-effect transistor (FET). It belongs to a subcategory of FETs known as Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs). In particular, this device\'s MOSFET is a single device, meaning that the part contains only one transistor. This type of MOSFET is widely used in a variety of applications due to its relatively low cost, small size, fast switching time, and high input resistance.
The IPU60R1K0CEAKMA1 is a type of FET known as a “p-channel” MOSFET. It is a type of transistor in which the current flows from the drain to the source when a positive voltage is applied to the gate. The IPU60R1K0CEAKMA1 is a depletion-mode MOSFET; when there is no voltage applied to the gate, the MOSFET is fully on and the channel is conducting. The drain-source resistance of the IPU60R1K0CEAKMA1 is about 1Kohm.
The IPU60R1K0CEAKMA1 is a commonly used component in a variety of applications. Because it is small, inexpensive, fast, and has a high input resistance, it is often used in digital circuits and other applications where a fast response time is critical. It is also used in power circuits, where it can be used to switch high currents. Some of the most common applications for the IPU60R1K0CEAKMA1 include high frequency switching circuits, digital logic circuits, power control circuits, and high voltage/current applications.
In addition to its physical characteristics, another important aspect of the IPU60R1K0CEAKMA1 is its working principle. FETs are active devices, meaning that they are able to amplify signals. This means that by applying a low voltage (such as from a computer amplifying it to a much higher voltage which is needed to drive a motor or light bulb. The basic working principle of the IPU60R1K0CEAKMA1 is that when a voltage is applied to the gate terminal of the transistor, the conductivity of the channel can be controlled. By changing the voltage applied to the gate terminal, the resistance of the channel can be varied, and this alters the current that can flow through the channel. This allows the transistor to act as a switch, controlling the flow of current through the device.
In summary, the IPU60R1K0CEAKMA1 is a single p-channel MOSFET transistor. It is used in a variety of applications due to its low cost, small size, fast switching time, and high input resistance. Its working principle is that it can be used to control the flow of current through the device by varying the resistance of its channel through the application of a voltage to the gate terminal. The IPU60R1K0CEAKMA1 is an invaluable component in digital and power circuits, and is an essential part of many of today\'s modern devices.
The specific data is subject to PDF, and the above content is for reference
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