IPU60R2K0C6AKMA1 Allicdata Electronics
Allicdata Part #:

IPU60R2K0C6AKMA1-ND

Manufacturer Part#:

IPU60R2K0C6AKMA1

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V TO-251
More Detail: N-Channel 600V 2.4A (Tc) 22.3W (Tc) Through Hole P...
DataSheet: IPU60R2K0C6AKMA1 datasheetIPU60R2K0C6AKMA1 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.25974
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PG-TO251-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 22.3W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 2 Ohm @ 760mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tube 
Description

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The IPU60R2K0C6AKMA1 is a single N-channel enhancement mode Field-Effect Transistor (FET). It is designed for high speed switching applications. This FET has an extremely low on-state resistance as low as 2.0Ω, which enables device to perform high current and power management. This FET has a rated drain current up to 60A, a maximum drain-source voltage (VDS) of 80V, and an on-state resistance (RDS) of just 2.0Ω. It is especially suited for high power management applications like e-bikes, UPS, welding machines and 3 Phase AC motor drives.

The IPU60R2K0C6AKMA1 utilizes a unique drain-to-source avalanche breakdown voltage (BVDSS) allowing it to perform high current load operations without the need for additional components. It also has a fast switching time (td), low threshold voltage (VGS), low on-state resistance (RDS) and excellent recovery capabilities. Its unique design enables it to operate in both linear and switching modes. This makes it ideal for switch-mode power supply applications such as off-line converters and SMPS.

The working principle of IPU60R2K0C6AKMA1 is based on the concept of a two-terminal integrated device. It works on the principle of a semiconductor junction diode. A layer of semiconductor material (usually silicon) has two sides. When proper voltage is applied, current flows into one side of the junction and out of the other side. This current flow is controlled by a gate connection.

In the case of IPU60R2K0C6AKMA1, the gate connection is used to make and break an electric field, which in turn controls the current flow through the FET. The gate connection is the main control element and works in such a way that a weak amplifier can use a large input signal to switch the FET on and off. When the voltage applied to the gate connection is below a certain threshold, the FET is \'off\' and no current passes through it. When the voltage application increases to a certain level, the FET is \'on\' and current can flow.

The IPU60R2K0C6AKMA1 is a highly efficient and reliable FET device and is ideal for power management applications with high current requirements. It is well-suited for applications such as e-bikes, UPS, welding machines, and 3-Phase AC motor drives. With its low on-state resistance and fast switching capabilities, the IPU60R2K0C6AKMA1 is the perfect device for modern power control solutions.

The specific data is subject to PDF, and the above content is for reference

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