| Allicdata Part #: | IPU60R2K1CEBKMA1-ND |
| Manufacturer Part#: |
IPU60R2K1CEBKMA1 |
| Price: | $ 0.19 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 600V TO-251-3 |
| More Detail: | N-Channel 600V 2.3A (Tc) 22W (Tc) Through Hole PG-... |
| DataSheet: |  IPU60R2K1CEBKMA1 Datasheet/PDF |
| Quantity: | 27000 |
| 1 +: | $ 0.19000 |
| 10 +: | $ 0.18430 |
| 100 +: | $ 0.18050 |
| 1000 +: | $ 0.17670 |
| 10000 +: | $ 0.17100 |
Specifications
| Vgs(th) (Max) @ Id: | 3.5V @ 60µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | PG-TO251-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 22W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 140pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 6.7nC @ 10V |
| Series: | CoolMOS™ CE |
| Rds On (Max) @ Id, Vgs: | 2.1 Ohm @ 760mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.3A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Last Time Buy |
| Packaging: | Tube |
Description
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<html><head><title>Transistors - FETs, MOSFETs - Single</title></head><body><h2>IPU60R2K1CEBKMA1 Application Field and Working Principle</h2><p>The IPU60R2K1CEBKMA1 is a single MOSFET device that is widely used in many different applications. It is a field effect transistor (FET) device, which is an important component in the integrated power electronics and control applications.</p><p>The IPU60R2K1CEBKMA1 is designed to operate at voltages up to 60 V, and it has very low on-resistance values, which makes it suitable for use in low-loss applications. In addition, the IPU60R2K1CEBKMA1 also has a very low gate charge, which means it can be used to switch heavy loads in high-frequency applications.</p><p>The IPU60R2K1CEBKMA1 is an N-channel device, which means that it has an electrode that is positively charged relative to the other two electrodes. This allows the device to be used in circuits where it is necessary to control the flow of current between two points. This makes the IPU60R2K1CEBKMA1 an ideal choice for use in power supply designs and motor control applications.</p><p>The IPU60R2K1CEBKMA1 works on a principle known as the MOSFET switching action. When a voltage is applied to the gate, it causes a current to flow from the drain to the source. The current flow across the drain and source depends on the voltage applied to the gate, and this is known as the gate threshold voltage. In other words, the higher the voltage that is applied to the gate, the more current that flows from the drain to the source.</p><p>The IPU60R2K1CEBKMA1 has a maximum drain to source voltage of 60 V, which means that it is suitable for use in applications where high voltage requirements are necessary. It also has a very low total gate charge, which makes it suitable for switching heavy loads in high frequency applications. In addition, it has a very low static drain to source on-state resistance, which allows it to be used in applications that require low power losses.</p><p>The IPU60R2K1CEBKMA1 is a versatile device that can be used in a variety of different applications. It is used in motor control, power supplies, DC-DC converters, gate drive systems, and more. It has a wide range of features that make it suitable for many different applications.</p></body></html>The specific data is subject to PDF, and the above content is for reference
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