IPU60R1K4C6BKMA1

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The IPU60R1K4C6BKMA1 is a silicon product from MKM Semiconductor which belongs to their FETs, MOSFETs and Single family. This product has been designed with an optimal combination of low On resistance, fast switching speed and minimal conduction losses to meet the requirements of a wide range of applications.

A field-effect transistor (FET) is a semiconductor device consisting of a source, a drain and a gate, which is electrically separated by an oxide layer. In FETs, the channel between the source and drain is selectively modulated with electric current by controlling the voltage applied at the gate. It is a voltage controlled device and its gate voltage is either positive or negative. Most of the FETs, including the IPU60R1K4C6BKMA1, are usually symmetric with drain and source being interchangeable.

MOSFet (Metal-Oxide Semiconductor FET) is a type of FET which feature a close proximity of gate to the source and drain. This closeness allows for a highly efficient transfer of charge from drain to source. The gate is insulated from the channel via a layer of oxide which makes it possible to control the resistance between the drain and source by applying the appropriate gate voltage. This makes MOSFETs the ideal solution for applications that require high speed switching performance and low power consumption.

The IPU60R1K4C6BKMA1 is a single- transistor MOSFET device that combines low On resistance with fast switching speed, and can operate in either enhancement or depletion mode. The device has an On-state resistance of 2.4 mΩ and a maximum drain source voltage of 60 V, allowing for efficient switching in a wide range of applications. It can be used in power electronic applications such as DC/DC converters, Power over Ethernet and Lighting Control, as well as in applications such as Audio Amplifiers and Automotive Electronics. The device is also suitable for use in power management circuits and battery charging systems.

The basic working principle of the IPU60R1K4C6BKMA1 is straightforward. A positive voltage is applied to the gate, which creates an electric field between the gate and the source. This electric field reduces the resistance between the source and the drain, allowing current to flow. When the gate voltage is removed, the resistance is increased, which stops the current flow and the device is in its off-state. This makes the device suitable for making high-speed switching decisions, as the switching time can be as low as a few nanoseconds.

The IPU60R1K4C6BKMA1 is an excellent example of a single-transistor MOSFET device that combines low On resistance with fast switching speed, allowing for efficient and reliable operation in a wide range of applications. Its low On resistance and high drain source voltage makes it an ideal choice for power electronic systems, audio amplifiers and automotive electronics. The device also features a low gate charge, which contributes to lower power consumption and faster switching performance, making it suitable for high-speed switching applications.

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