IPU60R2K0C6BKMA1 Allicdata Electronics
Allicdata Part #:

IPU60R2K0C6BKMA1-ND

Manufacturer Part#:

IPU60R2K0C6BKMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 600V 2.4A TO-251
More Detail: N-Channel 600V 2.4A (Tc) 22.3W (Tc) Through Hole P...
DataSheet: IPU60R2K0C6BKMA1 datasheetIPU60R2K0C6BKMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PG-TO251-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 22.3W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 2 Ohm @ 760mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IPU60R2K0C6BKMA1 is a 60V, 2kA N-channel super-junction MOSFET.

Application Field

This device is suitable for a wide range of applications, and can be used for switching, positioning, and motor control applications. In particular, it is well suited to applications that require low quiescent current and high efficiency. It can also be used for amplifier, regulator, and protection circuit designs, as well as in high efficiency Power supplies and power converters.

Working Principle

The IPU60R2K0C6BKMA1 uses an N-type MOSFET to operate as a switch, controlling the flow of current when it is closed or opened. When the gate voltage of the device is low, current is unable to flow and the device is in the “off” state. When the gate voltage is raised, the MOSFET will open and allow current to flow. This enables the device to be used to control the on/off times of circuits, and to regulate the power output of the device.

In addition, this MOSFET has a low input and output voltage, which makes it suitable for use in low voltage applications. It offers an excellent on-resistance ratio, enabling it to perform efficiently even when the power supply is low. Furthermore, the IPU60R2K0C6BKMA1 is designed to operate without producing excess heat, enabling it to maintain a consistent performance. As such, it can be used in applications operated in challenging and high temperature environments.

Conclusion

The IPU60R2K0C6BKMA1 is an ideal choice for applications where high efficiency, low power dissipation, and accurate control are required. It can be used in a variety of different applications, from switching to protection circuits. Furthermore, its low voltage operation and excellent power efficiency provide reliable performance in any environment.

The specific data is subject to PDF, and the above content is for reference

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