| Allicdata Part #: | IPU60R600C6BKMA1-ND |
| Manufacturer Part#: |
IPU60R600C6BKMA1 |
| Price: | $ 0.88 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 600V 7.3A TO-251 |
| More Detail: | N-Channel 600V 7.3A (Tc) 63W (Tc) Through Hole PG-... |
| DataSheet: |  IPU60R600C6BKMA1 Datasheet/PDF |
| Quantity: | 987 |
| 1 +: | $ 0.79380 |
| 10 +: | $ 0.70434 |
| 25 +: | $ 0.63655 |
| 100 +: | $ 0.55692 |
| 250 +: | $ 0.48870 |
| 500 +: | $ 0.43188 |
| 1000 +: | $ 0.34096 |
| 2500 +: | $ 0.31823 |
| 5000 +: | $ 0.30231 |
| Vgs(th) (Max) @ Id: | 3.5V @ 200µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | PG-TO251-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 63W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 20.5nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 2.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7.3A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Discontinued at Digi-Key |
| Packaging: | Tube |
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The IPU60R600C6BKMA1 is an N-channel enhancement mode power MOSFET manufactured by ROHM. This MOSFET usually comes in a compact, ultra-small package that is highly suitable for consumer applications. It has high voltage blocking capabilities, fast switching characteristics, and low on-state resistance. This makes it ideal for use in consumer applications, such as in the power supplies of consumer electronics.
The IPU60R600C6BKMA1 has a maximum drain source breakdown voltage of 600V. It also has an extremely low RDS (on) of just 0.096 Ohms at a drain current of 60A and an operating temperature range of -55°C to 175°C. The maximum on-state resistance, RDS (on), is the parameter that governs the amount of power dissipation, so having a low RDS (on) ensures that power dissipation is kept at a minimum.
The working principle of the IPU60R600C6BKMA1 is based on the design of the MOSFET and its ability to control the flow of currents through the device. It uses the gate-source voltage to control the on and off state of the device. When a voltage is applied to the gate-source terminal, the gate-source voltage divides the source-drain channel and the impedance between the source and drain is increased. This impedance increases the resistance in the device and decreases the flow of the current.
In terms of application fields, the IPU60R600C6BKMA1 is commonly used in consumer electronics such as laptop adapters and chargers, DC-to-DC converters, audio and video amplifiers, power supplies and motor control. In addition, it is also suitable for use in industrial applications, such as welding machines and high-power transducers.
In conclusion, the IPU60R600C6BKMA1 is an N-channel enhancement mode power MOSFET manufactured by ROHM. It has a maximum drain-source breakdown voltage of 600V and an RDS (on) of just 0.096 Ohms at a drain current of 60A and an operating temperature range of -55°C to 175°C. Common application fields for this MOSFET include consumer electronics, industrial applications and welding machines. Its working principle is based on the design of the MOSFET and its ability to control the flow of current through the device.
The specific data is subject to PDF, and the above content is for reference
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