IPU60R950C6AKMA1

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IPU60R950C6AKMA1 is a N-Channel power MOSFET from Infineon Technologies that provides the highest level of performance in a wide range of applications. It is designed to meet the requirements of applications such as high switching speed, high-current loads, and broad voltage ranges. This high-performance power MOSFET is built with Infineon’s advanced high reliability process technology which enhances its efficiency and power density.

The IPU60R950C6AKMA1 features an industry-standard TO-220 package. This allows it to be used in tight spaces, as it occupies only a small mounting area. This power MOSFET offers a high level of switching speed, with a maximum on-resistance of 0.095 ohms and a maximum on-state drain current of 94 Amps. Its maximum drain-source voltage is 600V and its maximum gate threshold voltage is 4V.

The IPU60R950C6AKMA1 makes use of a unique process technology which yields improved on-resistance figures. This process also provides excellent thermal performance, with a maximal junction-to-case thermal resistance of 2.5°C/W. This ensures the Mosfet can operate at higher temperatures and dissipate more heat than its predecessors. Additionally, its low internal gate capacitance and high gain bandwidth makes it suitable for high frequency switching applications.

The IPU60R950C6AKMA1 is designed for applications such as DC-DC or AC-DC converters, in systems ranging from automotive to consumer electronics. It is also ideal for use in DC motors, solenoids, and other high power applications. Its fast switching and low on-resistance make it the perfect choice for circuits that run continuously, while its low gate charge allows it to be used in circuits requiring frequent switching.

The IPU60R950C6AKMA1 is based on MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology. It utilizes four terminals – the source, gate, Drain and bulk terminal. A potential applied to the gate terminal changes the threshold voltage of the MOSFET and allows current to flow from the source to the drain. The amount of current that can flow is determined by the resistance of the channel created between the source and the drain. This process is known as high-frequency capacitive switching and is widely used in power electronics.

In conclusion, the IPU60R950C6AKMA1 is a high reliability power MOSFET offering excellent performance in a wide range of applications. With its fast switching speed, low on-resistance, and industry-standard TO-220 package, it is the perfect choice for high current loads and high frequency switching applications. This MOSFET offers superior temperature performance, while its advanced process technology ensures high reliability. Finally, its low gate charge makes it suitable for circuits requiring frequent switching.

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