IPU60R1K0CEBKMA1

Vgs(th) (Max) @ Id:	3.5V @ 130µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TO-251
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	37W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	280pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Series:	CoolMOS™ CE
Rds On (Max) @ Id, Vgs:	1 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.3A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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IPU60R1K0CEBKMA1 is an insulated gate FETs that has the wide applications in the industrial and consumer environments. It has the capability to handle up to 90V and the low level of gate-source voltage, making it ideal for use in applications needed complex switching control, like power amplifiers, TV transmission, and power amplifiers.The working principle of IPU60R1K0CEBKMA1 is as follows: when a positive voltage is applied to the gate, it will be attracted to the electrode located just below the gate and forms an inversion layer. The inversion layer is a mechanical conductor of electrons, which allows current to flow. As the gate voltage is increased, the inversion layer expands, resulting in an increase in electric charge and current. When the gate voltage is decreased, the inversion layer becomes thinner, reducing the current.In terms of structure, the IPU60R1K0CEBKMA1 is composed of a high-temperature resistant N-channel MOSFET, whereby the N-channel consists of a conductive material like polysilicon or silicon dioxide. An insulated gate minimizes the capacity of electric charge and current transmission, which grants the device a high-level electrical stability. The Drain-Source resistance that is represented by the RDS(on) value is typically around 0.04 Ohm, which is extremely low, making under 1.5V gate voltage and up to 90V drain voltage possible.IPU60R1K0CEBKMA1 is widely used in DC-DC converters, motor control, and power amplifiers, especially when a high level of switching speed and low gate-source voltage is desired. It is also suitable for use in TV transmission and high-power amplifiers due to its high switching performance and 90V drain voltage capability.The IPU60R1K0CEBKMA1 also offers various advantages in comparison to the other devices on the market. This includes excellent insulation performance, high channel density, and low on-resistance. It offers design flexibility with the ability to output the Drain-Source voltage in a wide range. It offers a low level of power dissipation and has a higher level of current-carrying capacity, which makes it suitable for use in applications with tight space requirements.Overall, the IPU60R1K0CEBKMA1 is a highly reliable and efficient device with a wide range of industrial and consumer applications. Its low gate-source voltage, high switching speed, and high drain voltage capability make it ideal for use in a variety of applications. Its structure and design ensures a high-level of electrical stability, and its extremely low on-resistance value makes it suitable for use in tight spaces. Its high channel density and high current-carrying capacity make it an excellent choice for powering various devices and systems.

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