IPU80R1K0CEAKMA1

Vgs(th) (Max) @ Id:	3.9V @ 250µA
Package / Case:	TO-251-3 Stub Leads, IPak
Supplier Device Package:	PG-TO251
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	785pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	31nC @ 10V
Series:	CoolMOS™ CE
Rds On (Max) @ Id, Vgs:	950 mOhm @ 3.6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5.7A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

IPU80R1K0CEAKMA1 is a type of Single MOSFET transistor with a power rating of 100W (20V, 0.5A) at 25°C. It is one of the leading transistors in the industry with its wide application range and high performance. This article will provide an overview of the application field and working principle of the IPU80R1K0CEAKMA1.

Application Fields

The IPU80R1K0CEAKMA1 is suitable for uses in telecommunication systems, automotive systems, consumer electronics and factory automation. It is particularly well-suited for switching circuits, as it can provide fast H-bridge functions, low resistance and low capacitance, making it ideal for high-speed switching applications. It can also be used for motor drive applications, as it is designed for fast frequency switching and its wide current range makes it ideal for motor control.

Working Principle

The IPU80R1K0CEAKMA1 is a n-channel enhancement-mode power MOSFET transistor with a maximum drain-source drain ratio of 500V/1. Its function is to amplify the voltage signal. The transistor work is based on the three-terminal structure of the output transistor gate-drain-source. When the gate voltage is higher than the threshold voltage of the transistor, the electric field between the gate and the channel is generated, and the transistor is turned on. Once the transistor is turned on, the current between the drain and the source increases. When the gate voltage is received, the electric field between the gate and the channel will be weakened and the transistor will be turned off.

Conclusion

The IPU80R1K0CEAKMA1 is a type of Single MOSFET transistor with a wide range of applications and high performance. It has a power rating of 100W (20V, 0.5A) at 25°C, making it suitable for many switching circuits and motor drive applications. Its working principle is based on the three-terminal structure of the output transistor gate-drain-source, where the gate voltage is larger than the threshold voltage to turn the transistor on and operate it. From the above, it can be seen that the IPU80R1K0CEAKMA1 is an excellent choice for a wide range of tasks.

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