IPU80R4K5P7AKMA1 Allicdata Electronics
Allicdata Part #:

IPU80R4K5P7AKMA1-ND

Manufacturer Part#:

IPU80R4K5P7AKMA1

Price: $ 0.60
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 800V 1.5A IPAK
More Detail: N-Channel 800V 1.5A (Tc) 13W (Tc) Through Hole PG-...
DataSheet: IPU80R4K5P7AKMA1 datasheetIPU80R4K5P7AKMA1 Datasheet/PDF
Quantity: 1000
1 +: $ 0.54810
10 +: $ 0.47817
100 +: $ 0.36893
500 +: $ 0.27328
1000 +: $ 0.21862
Stock 1000Can Ship Immediately
$ 0.6
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PG-TO251-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 13W (Tc)
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 500V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IPU80R4K5P7AKMA1 is a single component MOSFET transistor commonly used in various applications. It is a three-terminal semiconductor device that has the gate, drain, and source as its terminals. This type of transistor is used in several applications in order to control the power supply to a certain load. It can also serve as switches and amplifiers.

This type of MOSFET transistor has a wide variety of uses. It can be used in power electronics, such as power amplifiers, switching regulators, motor controllers, flyback converters, line voltage controllers, and other such devices. It is also suitable for use in digital logic, computer peripherals, and data converters. It is also used in medical device control applications, such as for electrocardiography and other medical monitoring systems.

The IPU80R4K5P7AKMA1 works by using an insulated gate to control the flow of charge carriers (electrons or holes) between the source and drain terminals. This is accomplished by modulating the electric field generated by the gate terminal. The resulting MOSFET current flow depends on various factors, such as the gate-source voltage, the drain-source voltage, and the gate-drain voltage.

The IPU80R4K5P7AKMA1 has a maximum voltage of 80V and a maximum current of 10A, making it an excellent choice for applications that require strong power and high-frequency switching. It has a high level of efficiency and offers excellent resistance to noise and temperature fluctuations.

In addition to the standard MOSFET features, the IPU80R4K5P7AKMA1 also features a heat resistive layer and a waterproof coating, making it suitable for use in harsh environments. This device also has built-in protection from overvoltage, allowing it to withstand up to 150V of leakage current. This feature helps to protect the semiconductor from damage due to overvoltage.

The IPU80R4K5P7AKMA1 also features a low gate charge that helps to reduce switching losses. This feature is especially helpful in applications that require high-frequency switching. Lastly, the device also has a low on-resistance of 0.35 ohms, making it an excellent choice for applications that need an especially accurate and low-power operation.

The IPU80R4K5P7AKMA1 is a versatile MOSFET device that can be used for a wide variety of applications. It is a reliable, high-performance and low-power device that can be used in power electronics, digital logic, computer peripherals, and medical device control applications. Its maximum voltage, current, and on-resistance ratings, coupled with its waterproof coating, make it an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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