
Allicdata Part #: | IPU80R4K5P7AKMA1-ND |
Manufacturer Part#: |
IPU80R4K5P7AKMA1 |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V 1.5A IPAK |
More Detail: | N-Channel 800V 1.5A (Tc) 13W (Tc) Through Hole PG-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.54810 |
10 +: | $ 0.47817 |
100 +: | $ 0.36893 |
500 +: | $ 0.27328 |
1000 +: | $ 0.21862 |
Vgs(th) (Max) @ Id: | 3.5V @ 200µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | PG-TO251-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 13W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 250pF @ 500V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 1.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IPU80R4K5P7AKMA1 is a single component MOSFET transistor commonly used in various applications. It is a three-terminal semiconductor device that has the gate, drain, and source as its terminals. This type of transistor is used in several applications in order to control the power supply to a certain load. It can also serve as switches and amplifiers.
This type of MOSFET transistor has a wide variety of uses. It can be used in power electronics, such as power amplifiers, switching regulators, motor controllers, flyback converters, line voltage controllers, and other such devices. It is also suitable for use in digital logic, computer peripherals, and data converters. It is also used in medical device control applications, such as for electrocardiography and other medical monitoring systems.
The IPU80R4K5P7AKMA1 works by using an insulated gate to control the flow of charge carriers (electrons or holes) between the source and drain terminals. This is accomplished by modulating the electric field generated by the gate terminal. The resulting MOSFET current flow depends on various factors, such as the gate-source voltage, the drain-source voltage, and the gate-drain voltage.
The IPU80R4K5P7AKMA1 has a maximum voltage of 80V and a maximum current of 10A, making it an excellent choice for applications that require strong power and high-frequency switching. It has a high level of efficiency and offers excellent resistance to noise and temperature fluctuations.
In addition to the standard MOSFET features, the IPU80R4K5P7AKMA1 also features a heat resistive layer and a waterproof coating, making it suitable for use in harsh environments. This device also has built-in protection from overvoltage, allowing it to withstand up to 150V of leakage current. This feature helps to protect the semiconductor from damage due to overvoltage.
The IPU80R4K5P7AKMA1 also features a low gate charge that helps to reduce switching losses. This feature is especially helpful in applications that require high-frequency switching. Lastly, the device also has a low on-resistance of 0.35 ohms, making it an excellent choice for applications that need an especially accurate and low-power operation.
The IPU80R4K5P7AKMA1 is a versatile MOSFET device that can be used for a wide variety of applications. It is a reliable, high-performance and low-power device that can be used in power electronics, digital logic, computer peripherals, and medical device control applications. Its maximum voltage, current, and on-resistance ratings, coupled with its waterproof coating, make it an excellent choice for many applications.
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