
Allicdata Part #: | IPU80R1K4CEAKMA1-ND |
Manufacturer Part#: |
IPU80R1K4CEAKMA1 |
Price: | $ 0.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V TO251-3 |
More Detail: | N-Channel 800V 3.9A (Tc) 63W (Tc) Surface Mount TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
1500 +: | $ 0.38808 |
Vgs(th) (Max) @ Id: | 3.9V @ 240µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 2.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.9A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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The IPU80R1K4CEAKMA1 is a field effect transistor (FET) designed for very low-noise operation. This device is in the single mosfet category, which is a type of field effect transistor where the conductivity of the channel is affected by the voltage applied to the gate terminal. FETs are a type of switch in which the current flowing between the source and the drain can be controlled by the voltage applied to the gate terminal. In the case of a single mosfet FET, the channel between the source and the drain is formed of a single type of material, typically metal oxide semiconductor (MOS).
The IPU80R1K4CEAKMA1 is commonly used in industrial equipment, such as mobile phones, computers, and medical equipment, where low-noise operation and maximum efficiency are important features. This FET is also ideal for audio applications, where the absence of switching noise guarantees uninterrupted sound quality. Additionally, this device is immune to radiation interference and ESD up to a level of 8KV.
The working principle of the IPU80R1K4CEAKMA1 is rather simple. When the voltage applied to the gate terminal is increased, the electric field created attracts and repels electrons from the channel between the source and the drain. This in turn modulates the conductivity of the channel, and thus the current flowing between the source and the drain. By manipulating the voltage applied to the gate terminal, the current can be precisely adjusted. This is how FETs are used as switches in a wide range of applications.
The IPU80R1K4CEAKMA1 is a very efficient, low-noise FET. It is highly reliable, and is suitable for use in a wide range of applications, where low-noise operation and maximum efficiency are required. It is easy to use and highly cost-effective, making it the perfect choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IPU80R1K4CEBKMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V 3.9A TO2... |
IPU80R2K8CEAKMA1 | Infineon Tec... | 0.33 $ | 1000 | MOSFET N-CH 800V TO251-3N... |
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IPU80R2K4P7AKMA1 | Infineon Tec... | 0.72 $ | 1459 | MOSFET N-CH 800V 2.5A TO2... |
IPU80R1K4CEAKMA1 | Infineon Tec... | 0.43 $ | 1000 | MOSFET N-CH 800V TO251-3N... |
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