IPU80R1K4CEAKMA1 Allicdata Electronics
Allicdata Part #:

IPU80R1K4CEAKMA1-ND

Manufacturer Part#:

IPU80R1K4CEAKMA1

Price: $ 0.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 800V TO251-3
More Detail: N-Channel 800V 3.9A (Tc) 63W (Tc) Surface Mount TO...
DataSheet: IPU80R1K4CEAKMA1 datasheetIPU80R1K4CEAKMA1 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.38808
Stock 1000Can Ship Immediately
$ 0.43
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tube 
Description

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The IPU80R1K4CEAKMA1 is a field effect transistor (FET) designed for very low-noise operation. This device is in the single mosfet category, which is a type of field effect transistor where the conductivity of the channel is affected by the voltage applied to the gate terminal. FETs are a type of switch in which the current flowing between the source and the drain can be controlled by the voltage applied to the gate terminal. In the case of a single mosfet FET, the channel between the source and the drain is formed of a single type of material, typically metal oxide semiconductor (MOS).

The IPU80R1K4CEAKMA1 is commonly used in industrial equipment, such as mobile phones, computers, and medical equipment, where low-noise operation and maximum efficiency are important features. This FET is also ideal for audio applications, where the absence of switching noise guarantees uninterrupted sound quality. Additionally, this device is immune to radiation interference and ESD up to a level of 8KV.

The working principle of the IPU80R1K4CEAKMA1 is rather simple. When the voltage applied to the gate terminal is increased, the electric field created attracts and repels electrons from the channel between the source and the drain. This in turn modulates the conductivity of the channel, and thus the current flowing between the source and the drain. By manipulating the voltage applied to the gate terminal, the current can be precisely adjusted. This is how FETs are used as switches in a wide range of applications.

The IPU80R1K4CEAKMA1 is a very efficient, low-noise FET. It is highly reliable, and is suitable for use in a wide range of applications, where low-noise operation and maximum efficiency are required. It is easy to use and highly cost-effective, making it the perfect choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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