IPU80R750P7AKMA1

The IPU80R750P7AKMA1 is a single N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) made from silicon. It is an insulated-gate FET (IGFET) which is used in a variety of applications. This is because it is capable of low on-resistance with a gate drive voltage as low as 4.5 volts, shallow gate-oxide junction, narrow drain-source breakdown voltage (BV), and low reverse transfer capacitance.

Applications

The IPU80R750P7AKMA1 is used in a variety of applications, such as switching and power management. This includes fabrication of waveform generator circuits, power-supply circuits, and analog integrated circuits. Given its low on-resistance and high switching speed, it is often used for high-frequency switching applications, such as high-speed logic circuits, amplifiers, and power supply circuits. It is also used for electrostatic discharge (ESD) protection, digital logic interfacing, and current sensing.

Working Principle

The IPU80R750P7AKMA1 operates by allowing current to flow through a channel formed between source and drain regions when a voltage is applied to its gate. The channel is created when electrons in the channel region are attracted to the positive gate input. This electrostatic attraction reduces the energy barrier between source and drain and allows current to flow. The amount of current that is allowed to flow is proportional to the size of the gate voltage applied. The source and drain regions of an IGFET are constrained between the source and drain junctions, meaning that the channel is constricted and there is an enhanced resistance between source and drain. This helps to reduce the on-resistance when compared to other FETs.

Conclusion

In summary, the IPU80R750P7AKMA1 is a single N-channel MOSFET used in a variety of switching and power management applications. It is capable of low on-resistance with a gate voltage as low as 4.5V, shallow gate-oxide junction, and narrow drain-source breakdown voltage, which results in a low reverse transfer capacitance. The working principle of the device is based on electrostatic attraction and the constriction of the channel between the source and drain junctions, resulting in an increase of resistance between the two.