IPU80R1K4CEBKMA1 Allicdata Electronics
Allicdata Part #:

IPU80R1K4CEBKMA1-ND

Manufacturer Part#:

IPU80R1K4CEBKMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 800V 3.9A TO251-3
More Detail: N-Channel 800V 3.9A (Tc) 63W (Tc) Through Hole PG-...
DataSheet: IPU80R1K4CEBKMA1 datasheetIPU80R1K4CEBKMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PG-TO251-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IPU80R1K4CEBKMA1 is a MOSFET, which is a type of transistor. As a single transistor, it is used to switch larger concentrations of electricity. This can be used within a variety of applications, so it is important to understand the specific attributes of the IPU80R1K4CEBKMA1 and the principles of operation when selecting it for an electrical or electronic application.

The design of the IPU80R1K4CEBKMA1 includes a source and a drain, which are typically constructed from an n-type semiconductor material. The gate is located between the source and the drain, and consists of a p-type semiconductor material. The source and the drain are configured and arranged to form a transistor. When a voltage is applied to the gate, a field effect is created that controls the flow of electrical current between the source and the drain. This is how the IPU80R1K4CEBKMA1 transistor is able to control the flow of electrical current, making it an attractive choice for applications that require precise control and low noise.

The IPU80R1K4CEBKMA1 has a number of features that make it attractive for use in various applications. It is able to support a wide range of voltage and current levels, which makes it ideal for applications that require a large amount of current or voltage. It also has a low drain-source resistance, meaning that it can support large amounts of electrical current without having to draw additional power from other sources. Finally, it is also able to withstand high temperatures, making it suitable for use in harsh environments.

The IPU80R1K4CEBKMA1 has a variety of applications, and can be used in a range of different electrical and electronic circuits and systems. One of the most common applications is its use as a switch, where it is able to turn on and off power in response to a voltage applied to the gate. It is also used as a signal amplifier and rectifier, as it is able to regulate the signal path and provide a precise output. Finally, it can also be used to regulate the current flow in an electrical circuit, providing precise control when designing and wiring circuits.

The IPU80R1K4CEBKMA1 MOSFET is a single transistor that is used to switch large concentrations of electrical current, making it an attractive choice for a variety of electrical and electronic applications. Its design includes a source and a drain, and a gate between them, which is able to control the flow of current between them when a voltage is applied to the gate. Its low drain-source resistance makes it suitable for applications that require high levels of current, and it is also able to withstand high temperatures, making it suitable for harsh environments. Finally, it is used as a switch, an amplifier, a rectifier and to regulate current flow in electrical circuits, making it a versatile and efficient choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IPU8" Included word is 15
Part Number Manufacturer Price Quantity Description
IPU80R1K4CEBKMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 800V 3.9A TO2...
IPU80R2K8CEAKMA1 Infineon Tec... 0.33 $ 1000 MOSFET N-CH 800V TO251-3N...
IPU80R1K0CEAKMA1 Infineon Tec... 0.53 $ 1000 MOSFET N-CH 800V 5.7A TO2...
IPU80R1K2P7AKMA1 Infineon Tec... 0.89 $ 1490 MOSFET N-CH 800V 4.5A TO2...
IPU80R2K4P7AKMA1 Infineon Tec... 0.72 $ 1459 MOSFET N-CH 800V 2.5A TO2...
IPU80R1K4CEAKMA1 Infineon Tec... 0.43 $ 1000 MOSFET N-CH 800V TO251-3N...
IPU80R750P7AKMA1 Infineon Tec... 1.16 $ 1500 MOSFET N-CH 800V 7A TO251...
IPU80R600P7AKMA1 Infineon Tec... 1.34 $ 1500 MOSFET N-CH 800V 8A TO251...
IPU80R3K3P7AKMA1 Infineon Tec... 0.65 $ 1500 MOSFET N-CH 800V 1.9A TO2...
IPU80R4K5P7AKMA1 Infineon Tec... 0.6 $ 1000 MOSFET N-CH 800V 1.5A IPA...
IPU80R2K0P7AKMA1 Infineon Tec... 0.7 $ 1466 MOSFET N-CH 800V 3A TO251...
IPU80R2K8CEBKMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 800V 1.9A TO2...
IPU80R900P7AKMA1 Infineon Tec... 1.04 $ 1000 MOSFET N-CH 800V 6A TO251...
IPU80R1K0CEBKMA1 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 800V 5.7A TO2...
IPU80R1K4P7AKMA1 Infineon Tec... 0.79 $ 325 MOSFET N-CH 800V 4A IPAKN...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics