IPU80R2K0P7AKMA1 Allicdata Electronics
Allicdata Part #:

IPU80R2K0P7AKMA1-ND

Manufacturer Part#:

IPU80R2K0P7AKMA1

Price: $ 0.70
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 800V 3A TO251-3
More Detail: N-Channel 800V 3A (Tc) 24W (Tc) Through Hole PG-TO...
DataSheet: IPU80R2K0P7AKMA1 datasheetIPU80R2K0P7AKMA1 Datasheet/PDF
Quantity: 1466
1 +: $ 0.63630
10 +: $ 0.56574
100 +: $ 0.44711
500 +: $ 0.34675
1000 +: $ 0.27375
Stock 1466Can Ship Immediately
$ 0.7
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PG-TO251-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 24W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 500V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Series: CoolMOS™ P7
Rds On (Max) @ Id, Vgs: 2 Ohm @ 940mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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A IPU80R2K0P7AKMA1 is a type of Field-Effect Transistor (FET), a type of transistor that relies on an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material. Specifically, it is a single, insulated-gate, photovoltaic polymers field-effect transistor (IPVFET) made with commercially available polymers, poly[2-methoxy-5-(2’-ethyl-hexyloxy)-1, 4-phenylene vinyl-(ne)ene]. This type of transistor is useful in a variety of applications, due to its unique combination of characteristics.

The IPU80R2K0P7AKMA1 is an enhancement-type FET, meaning that the conductance of its channel increases when an electric field is applied. This distinguishes it from depletion-type FETs, which have a conductance that decreases when an electric field is applied.

At the heart of the IPU80R2K0P7AKMA1 is its electric field. This field can vary in strength, and when it does, it causes a change in the conductivity of the transistor channel. The strength of this field is determined by the current that passes through the transistor’s gate (the electric charge “carrier”), and the “gate voltage” or voltage across the channel. This gate voltage can be used to control the flow of current, making the IPU80R2K0P7AKMA1 useful in applications where controlling current is important.

The IPU80R2K0P7AKMA1 is often used in analog applications, where controlling current is key. For example, it can be used to amplify small signals in order to make them easier to read. It can also be used to create low-noise amplifiers. Additionally, it can be used in applications such as switch control, line-driver interfaces and switching power supplies.

Due to its unique combination of characteristics, the IPU80R2K0P7AKMA1 is often preferred over other Field-Effect Transistors. It is an efficient device, with low power dissipated when inactive, and fast switching times. Additionally, it is easily integrated into other systems, as it has a standard footprint and pinout.

In short, the IPU80R2K0P7AKMA1 is a single, insulated-gate, photovoltaic polymer field-effect transistor that has many useful applications in both analog and digital electronics. It is an efficient, fast device, and it is easily integrated into other systems thanks to its standard footprint and pinout.

The specific data is subject to PDF, and the above content is for reference

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