IPU80R3K3P7AKMA1 Allicdata Electronics
Allicdata Part #:

IPU80R3K3P7AKMA1-ND

Manufacturer Part#:

IPU80R3K3P7AKMA1

Price: $ 0.65
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 800V 1.9A TO251-3
More Detail: N-Channel 800V 1.9A (Tc) 18W (Tc) Through Hole PG-...
DataSheet: IPU80R3K3P7AKMA1 datasheetIPU80R3K3P7AKMA1 Datasheet/PDF
Quantity: 1500
1 +: $ 0.59220
10 +: $ 0.51660
100 +: $ 0.39848
500 +: $ 0.29517
1000 +: $ 0.23613
Stock 1500Can Ship Immediately
$ 0.65
Specifications
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: PG-TO251-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 18W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 500V
Vgs (Max): ±20V
Series: CoolMOS™ P7
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Rds On (Max) @ Id, Vgs: 3.3 Ohm @ 590mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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IPU80R3K3P7AKMA1 is a type of field-effect transistor, also known as a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is a single transistor that is typically used in electronic switching applications, due to its low voltage and current requirements. The device is formed from a substrate of silicon, with source, gate and drain regions, each containing a different type of semiconductor material.

The IPU80R3K3P7AKMA1 MOSFET is specially designed for use in high frequency switching applications, such as RF switching and logic circuits. The device has a high speed switching capability, which is beneficial for applications requiring quick response times, as well as high switching frequencies. The device has a low on-resistance of 3K3, meaning it can quickly switch from an ON to an OFF state. In addition, the device has a low thermal resistance, allowing it to operate at high temperatures without suffering significant degradation.

The IPU80R3K3P7AKMA1 MOSFET operates by applying an input voltage to the gate, which controls the bias at the drain. This change in the drain bias results in a change in the voltage at the drain and the transistor’s load. When the drain bias is decreased, the transistor disables, and when the drain bias is increased, the transistor is enabled. The speed at which the transistor switches is determined by the voltage applied to the gate. The higher the applied voltage, the faster the transistor can switch.

The IPU80R3K3P7AKMA1 MOSFET can be used in applications such as RF power amplifiers and switching circuits. It is particularly useful for RF applications due to its low-noise capability and its ability to switch quickly. The device is also used in low-voltage logic circuits and other high-speed switching applications, such as USB controllers, motor controllers, and data converters.

Because of its high performance and low cost, the IPU80R3K3P7AKMA1 MOSFET is a popular choice for many electronic switching applications. Its reliable switching performance allows it to provide consistent performance in a variety of environments. Furthermore, its low on-resistance and fast switching speed make it suitable for applications that require fast switching and high performance.

The specific data is subject to PDF, and the above content is for reference

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