IRF2804PBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6450pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	240nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	2.3 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Field effect transistors (FETs) are semiconductor devices that, when used properly, can be used to amplify and switch electrical signals. The IRF2804PBF is a vertical diffused metal–oxide–semiconductor field-effect transistor (MOSFET) with an N-channel field effect structure. This MOSFET is an advanced high-voltage, high-current device, ideal for power switching applications. This power MOSFET is available in a 1.6 mm × 1.1 mm, Pb-free, small-outline surface-mount, insulated-gate bipolar transistor (IGBT) package and is designed for use in low voltage switched-mode power supplies, motor control, and other applications.

Applications of IRF2804PBF

• Motor Control – motor control and drive applications require power MOSFETs with rugged and reliable performance. The IRF2804PBF high voltage, high current, power MOSFETs are designed for this type of application.• Automotive – the IRF2804PBF is ideal for high voltage and power applications in the automotive industry. It is compatible with a variety of automotive applications such as engine control, heating, ventilation, air conditioning, lighting, and fuel system control.• Power Supplies & Regulators – the IRF2804PBF is suitable for low voltage, high current power supply and regulated power supplies applications.• Industrial – the IRF2804PBF can be used in a variety of industrial applications such as air conditioning, printing, robotics, and general purpose switching.

Working Principle of IRF 2804PBF

The IRF2804PBF utilizes an insulated gate field-effect structure which is composed of p+ and n+ layers of silicon. A metal oxide-semiconductor screen oxide is formed around the p+ and n+ layers to form the insulated gate. When voltage is applied to the gate terminal, the screen oxide around the p+ and n+ layers is polarized and modulates the conductivity of the transistor. Because of this, the transistor is capable of amplifying and switching electrical signals.The IRF2804PBF is also known as an enhancement type device as no voltage is required to turn the FET “on”. In this mode, the FET works as a switch and the current is able to flow between the source and drain terminals by means of a larger “on” region. The on-resistance, or “RDS(on)” is reduced as the gate voltage is increased, thus decreasing the current needed to control the FET. The IRF2804PBF has an on-resistance of 11.6 ohms, a maximum voltage of 50V, a maximum drain current of 4A and a maximum gate capacitance of 180pF.The power-dissipation rating of this MOSFET is also noteworthy. It has a maximum power dissipation of 635mW, which ensures the device will work reliably in power switching applications where the device encounters high power.The IRF2804PBF also has a number of built-in protection features. It is designed with an over-voltage protection circuit, which ensures that the device does not suffer from short-term or sustained over-voltage conditions. The device also has a back gate structure to reduce losses from reverse recovery charges.In summary, the IRF2804PBF is a powerful, reliable, and cost-effective MOSFET device. It is an ideal choice for power switching applications due to its high voltage and current ratings, power dissipation, on-resistance, protection features, and cost-effectiveness.

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