IRF2804STRLPBF Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6450pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	240nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	2 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to IRF2804STRLPBF Application Field and Working Principle

The IRF2804STRLPBF is a N-channel MOSFET, which stands for metal-oxide-semiconductor field effect transistor, widely used within electronic devices. The application field for the device includes electronic equipment for information processing, power management and consumer entertainment. Furthermore, this type of MOSFET has a single channel, which makes it ideal for specialized applications that use only one channel, while other MOSFETs may use several channels.

Understanding the MOSFET Working Principle

In order to understand the working principle of the IRF2804STRLPBF MOSFET, first it’s important to have a basic understanding of what a MOSFET is and how it works. A MOSFET works by using a source (the terminal connected to the power supply) and a drain (the terminal connected to the load). In between these two terminals is a gate (the terminal where a voltage is applied). The application of a voltage on the gate locks the charge onto the gate, which in turn changes the resistance between the drain and the source.

Understanding the IRF2804STRLPBF Device

The IRF2804STRLPBF device is a single N-channel enhancement-mode MOSFET with a maximum drain current of 75 amps and a maximum drain-source voltage of 200 volts. It also has a total gate charge (Qg) of 6.2 nano-coulombs, which is the electric charge stored in the gate of the MOSFET to control the conductivity of the device.

Typical Applications and Characteristics

The typical applications for the IRF2804STRLPBF include power management within consumer electronics, switch and relay drivers, chip protection, and high-speed switching circuits. Additionally, this device has a low RDS(on) (drain-source on resistance) and a low gate-charge that allow it to be used in high-efficiency, high-speed switching applications, while also providing a high-frequency response and low capacitance, which is beneficial when dealing with high-frequency signals.

Performance Specifications and Reliability Level

Reliability is an important factor to consider when evaluating MOSFETs, and the IRF2804STRLPBF is no exception. This device has a maximum rated total power dissipation (PD) of 5Watts and a maximum rated junction temperature of 175℃. It also has an HBM (human body model) class 2 ESD (electrostatic discharge) rating of up to 2kV and an MSL (moisture sensitivity level) of 3A (see IPC-J-STD-020). The performance specifications of the IRF2804STRLPBF are also worth noting. This device has a maximum drain-source voltage (Vds) of 200V and a maximum drain current (Id) of 75A. It also has a maximum gate-source voltage (Vgs) of -20V to +20V and a Qg total gate charge of 6.2nC.

Conclusion

The IRF2804STRLPBF is a N-channel MOSFET that is extremely useful in various electronic applications due to its features and performance specifications. This device has a low RDS(on) and gate-charge, a high-frequency response, and low capacitance. Additionally, its maximum drain current is 75A and its maximum drain voltage is 200V. Furthermore, the MOSFET has an HBM class 2 ESD rating of up to 2kV, which makes it highly reliable in various applications.

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