Allicdata Part #: | IRF250P225-ND |
Manufacturer Part#: |
IRF250P225 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 250V 69A TO247AC |
More Detail: | N-Channel 250V 69A (Tc) 313W (Tc) Through Hole TO-... |
DataSheet: | IRF250P225 Datasheet/PDF |
Quantity: | 250 |
Gate Charge (Qg) (Max) @ Vgs: | 96nC @ 10V |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AC |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 313W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4897pF @ 50V |
Vgs (Max): | ±20V |
Series: | StrongIRFET™ |
Vgs(th) (Max) @ Id: | 4V @ 270µA |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 69A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRF250P225 is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) that is used in a variety of applications. The IRF250P225 is a single-gate device, which means that it has only one active gate that can be used to control the current flow. This type of transistor is often used in power electronics applications due to its low on-resistance and high current ratings.
The IRF250P225 can be used in many different applications and is particularly well suited for switching and power management applications. It can be used to control the amount of current that is allowed to pass through a circuit, or to switch a circuit on or off. In addition, it can be used in inverters and power converters, as well as other applications requiring fast switching times. The IRF250P225 can also be used for voltage or current sensing, as well as for amplification and filtering.
A key feature of the IRF250P225 is its low on resistance. This value is typically between 0.06 ohm and 0.12 ohm depending on the supply voltage. This means that the device can handle large currents with very little power dissipation. This makes the transistor ideal for high-power applications in which efficiency is highly valued.
The IRF250P225 is a depletion-mode MOSFET, meaning that the gate is connected to the source and the drain is connected to ground. In this configuration, the current flowing through the transistor will be controlled by the gate voltage. When the gate is at a low voltage, the transistor is turned off and no current will flow through it. However, if the gate voltage is increased, the current through the transistor will increase as well. This allows the gate voltage to be used to control the amount of current that passes through the transistor.
The working principle of the IRF250P225 is fairly simple. The source is connected to ground and the drain is connected to the gate. The gate voltage is then used to control the current flowing through the transistor. When the gate voltage is low (e.g. 0V), the transistor is turned off and no current can flow through it. However, when the gate voltage is increased, the current will begin to flow through the transistor. This is because the increased gate voltage will reduce the resistance of the transistor, allowing more current to flow through it.
Due to its high current ratings and low on-resistance, the IRF250P225 is an ideal choice for a variety of switching and power management applications. It can be used for voltage or current sensing, as well as for amplification and filtering. The IRF250P225 can also be used for switching applications such as motor speed or lighting control. The device can also be used for power converters, inverters, and other applications that require fast switching times. As such, the IRF250P225 is a versatile and reliable choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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