IRF2807ZLPBF

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Infineon\'s IRF2807ZLPBF is one of the most advanced power MOSFETs designed for high side load switching in applications such as H bridge motor control and active high-side load switch with low system cost.

The IRF2807ZLPBF is a single n-channel enhancement type MOSFET featuring silicon gate technology. It is designed for use as an electronic switch for high side switching in high-voltage applications. It has a high dense cell structure and a thick oxide layer for improved efficiency, as well as an integrated gate-to-source ESD (Electro-Static Discharge) protection.

With a drain current of up to 15 A and a drain-source voltage of up to 500 V, the device offers enhanced reliability in high-temperature operation. It is also RoHS compliant and offers excellent power dissipation performance and good thermal management at low voltage and current.

The power MOSFET is used in a wide range of applications, such as H bridge motor control and active high-side load switching, where low cost is desired. It can also be used for inrush current limiting, variable speed motor drives, automotive brakes, ignition systems, and a host of other applications.

The IRF2807ZLPBF works by leveraging the principle of voltage transfer amplification. This is an electrical resistance technology that allows an electric current to flow through an integrated circuit (IC) where the input voltage is greater than the output voltage. This is done by having a gate terminal that can be voltage driven and a drain terminal that can be current driven. When the voltage is applied to the gate terminal, a proportional current is stimulated in the drain terminal. This is an effective way to control the flow of current in a circuit where the voltage or current is below or above the threshold.

The IRF2807ZLPBF is also designed to have a low on-resistance (600mΩ typical at 10V) and high voltage rating (500V maximum). This makes it an ideal device for high-current load switching applications. It can be operated at high temperatures (up to 175°C) and is EMI/RFI compliant.

In addition, the device is designed to have a high-speed switching capability with a fast rise time. This feature is important in motor control applications, where it is important to limit current inrush and noise. With its low variance of on-resistance and its thermal and ESD protection features, the IRF2807ZLPBF is an ideal choice for high power applications.

Overall, the Infineon IRF2807ZLPBF is a reliable, high performance and cost-effective power MOSFET device. Its high-efficiency and high-speed switching capability make it a great choice for high-side load switching applications. With its low-resistance and high-voltage ratings, the device can handle high currents and is capable of operating in high-temperature environments.

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