IRF2805SPBF Allicdata Electronics
Allicdata Part #:

IRF2805SPBF-ND

Manufacturer Part#:

IRF2805SPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 55V 135A D2PAK
More Detail: N-Channel 55V 135A (Tc) 200W (Tc) Surface Mount D2...
DataSheet: IRF2805SPBF datasheetIRF2805SPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5110pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 104A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

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The IRF2805SPBF is a Single N-Channel HEXFET® Power MOSFET transistor, specifically designed to minimize the losses in switch-mode power supplies. This comes with a 4.6V gate-to-source voltage, and a drain current of up to 28.5A.

MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistor, are transistors that can be used to amplify and switch signals. In contrast to the Bipolar Junction Transistor (BJT), which is a current-controlled device, MOSFETs are voltage-controlled devices. Since the channel between the source and the drain is essentially non-conducting in the off-state, the typical MOSFET is quite a bit slower than the typical BJT. Therefore, the MOSFETs are generally used as switching and amplifying devices, while the BJTs are used more broadly in low-frequency applications.

The primary advantage of the IRF2805SPBF MOSFET is its low gate charge. The gate charge is the gate current required by the MOSFET to switch its state. The lower the gate charge, the lower the switching losses of the MOSFET. This is an important consideration in switch-mode power supplies where the switching frequency is typically very high and losses can quickly accumulate. It is also more efficient, which leads to lower power consumption.

In addition to its low gate charge, the IRF2805SPBF transistor also has a very low RDS(on) resistance. This is the resistance between the Drain and Source when the MOSFET is in its conducting state. The lower the RDS(on) resistance, the lower the losses due to the resistance. This can also improve efficiency in certain applications. Furthermore, it has a very low gate threshold voltage, which is the voltage required to drive the gate of the MOSFET in its switched on state. All these features make it an excellent choice for use in switch-mode power supplies.

The IRF2805SPBF MOSFET is used in many applications, from power supplies and power converters, to solar inverters, to industrial equipment. In switch-mode power supplies, it is used to control the voltage and current, and to switch the power components on and off. This allows for the efficient use of power and for greater control over the system. It is also used in solar inverters, where it is used to switch the solar cells on and off. In some industrial equipment, it is used to control the voltage and current of the system, as well as to control the system’s start-up and shut-down.

To summarize, the IRF2805SPBF MOSFET is an excellent choice for applications where low losses, high efficiency, and high operating temperature are required. Its low gate charge and low RDS(on) resistance make it particularly suited for switch-mode power supplies, solar inverters, and other industrial equipment. Also, its low gate threshold voltage ensures that it is easily switched on and off. All these features come together and make it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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