Allicdata Part #: | IRF3546MTRPBFTR-ND |
Manufacturer Part#: |
IRF3546MTRPBF |
Price: | $ 2.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 4N-CH 25V 16A/20A 41PQFN |
More Detail: | Mosfet Array 4 N-Channel 25V 16A (Tc), 20A (Tc) S... |
DataSheet: | IRF3546MTRPBF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 2.59008 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 4 N-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Tc), 20A (Tc) |
Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 27A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 35µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1310pF @ 13V |
Power - Max: | -- |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 41-PowerVFQFN |
Supplier Device Package: | 41-PQFN (6x8) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IRF3546MTRPBF is an array of four Field-Effects transistors (FETs). This type of transistor is a type of semiconductor device which uses electric fields to control the flow of current within it. FETs are often used in intelligent electronic applications as they can be used to accurately control high voltages, allowing for very precise control of electricity. This product offers a small and reliable form factor, ideal for applications where space is at a premium.
The IRF3546MTRPBF offers the highest efficiency in a given voltage and current when compared to other similar devices. This product is made up of four individual MOSFETs (Metal Oxide Semiconductor Field effect transistors). This is the most advanced type of FET, and it offers a number of advantages over other FETs. Firstly, it is able to handle high voltages and currents while running at a low power level. This makes them highly efficient and suitable for applications where power management is a priority.
The IRF3546MTRPBF uses a number of different technologies to offer this advanced level of control. The first of these technologies is the gate oxide, which is an insulating layer between the MOSFETs gate and the surface of the device. This oxide layer acts as a filter, allowing only certain voltages and currents to pass through it. This helps to prevent any short circuits and ensures that the device operates within its maximum power and current ratings.
The MOSFETs in the IRF3546MTRPBF are also able to sense the voltage on their gate and adjust their internal resistance accordingly. This means that the device is able to maintain a constant voltage level regardless of the load, a feature which is useful in applications such as motor control where a constant voltage is required.
In addition to these technologies, the IRF3546MTRPBF also contains protection diodes. These diodes prevent any backflow of current. This helps to protect the device from any electrical or thermal damage that might occur as a result of a backwards current. It also helps to maintain the device’s performance under a variety of operating conditions.
All of these features combine to make the IRF3546MTRPBF an ideal device for applications where voltage and current levels must be accurately controlled for maximum efficiency and reliability. These include applications such as motor control, solar energy systems, and industrial automation. The range of voltage and current ratings mean that it can be used in a wide variety of applications, making it a highly versatile device.
The specific data is subject to PDF, and the above content is for reference
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