Allicdata Part #: | IRF3711ZCSTRLP-ND |
Manufacturer Part#: |
IRF3711ZCSTRLP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 92A D2PAK |
More Detail: | N-Channel 20V 92A (Tc) 79W (Tc) Surface Mount D2PA... |
DataSheet: | IRF3711ZCSTRLP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 92A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF3711ZCSTRLP is a single-level metal-oxide-semiconductor field-effect transistor (MOSFET). It is a voltage-controlled device, which is made up of two sections - a metal-oxide-semiconductor (MOS) gate and a drain-source path. The MOS gate controls the flow of current between the drain and the source. It can be used as either a switch or an amplifier, depending on the application. It features low on-resistance, low operating current, and low leakage current.
The IRF3711ZCSTRLP is commonly used in amplifier and high-frequency switching circuits. It is often used in systems that require fast switching, such as in switching mode power supplies (SMPS) and high-frequency communications systems. It is also used in motor control circuits, as well as in high-voltage power supply circuits. Additionally, it is suitable for high-quality audio amplifiers, video amplifiers, and light dimming circuits.
The working principle of the IRF3711ZCSTRLP is based on the charging or discharging of the gate-to-source capacitance. When the voltage applied to the gate is increased, the capacitance between the gate and the source will charge. This will result in an increase in the drain-source current. If a reverse bias voltage is applied to the gate, the capacitance will discharge, resulting in a decrease in the drain-source current. By controlling the voltage applied to the gate, the current flowing through the device can be regulated, allowing it to be used as a switch or an amplifier.
The IRF3711ZCSTRLP is an important component in numerous electronic systems due to its ability to provide fast switching and precise control over the current flow. It can be used for high-frequency switching, motor control, audio amplifiers, video amplifiers, and light dimming, as well as many other applications. Its low on-resistance and low operating current make it an ideal choice for applications requiring low power consumption.
The specific data is subject to PDF, and the above content is for reference
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