IRF3706STRLPBF

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The IRF3706STRLPBF is a high voltage, high speed, power MOSFET, designed for high performance, cost effective, and easy use. This device is produced using advanced trench technology with N-channel MOSFETs. The drain current is rated up to 3A, and typical values of on-resistance are 1, 10 and 100 ohms, depending on the specific device version.

The IRF3706STRLPBF is mainly employed in the LED backlighting applications and power management for portable devices, such as mobile phones and digital cameras. It features a low on-state resistance and fast switching time, with a capability to switch currents up to 500kHz. Its gate oxide thickness is 5 nm and its gate charge is 7.2 nC.

The working principle of the IRF3706STRLPBF transistors states that the gate terminal of the MOSFET is connected to a control voltage, VGS. That creates an electric field which turns the device conductive when a positive voltage is applied. When the voltage decreases and reaches a value of zero, the device is turned off. The drain voltage, VDS, is the voltage placed between the drain and source terminals. When the gate voltage is applied, a current is allowed to flow from the drain to the source.

The current that flows through a MOSFET is determined by the gate voltage, drain current, and the temperature usually expressed in terms of the drain-source voltage. The thermal resistance of the IRF3706STRLPBF is 145 °C/W and its maximum drain source voltage is 100 V. The device also has fast rise and fall times and can withstand up to 1kV ESD strike.

In conclusion, the IRF3706STRLPBF is a high voltage, high speed, power MOSFET designed for cost effective and easy use. It features a low on-state resistance and fast switching time, with the capability to switch up to 500kHz. It is mainly used for LED backlighting and power management for portable devices, and it has a thermal resistance of 145°C/W, a high gate oxide thickness, gate charge of 7.2nC, and a maximum 100V drain source voltage. The working principle of this transistor states that the gate terminal of the MOSFET is connected to a control voltage, VGS, which creates an electric field and turns the device conductive when a positive voltage is applied. The current that flows through the device is determined by the gate voltage, drain current, and the temperature. Its fast rise and fall times and high surge protection makes it suitable for high frequency applications.

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