Allicdata Part #: | IRF3707STRLPBF-ND |
Manufacturer Part#: |
IRF3707STRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 62A D2PAK |
More Detail: | N-Channel 30V 62A (Tc) 87W (Tc) Surface Mount D2PA... |
DataSheet: | IRF3707STRLPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 87W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1990pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 12.5 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 62A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF3707STRLPBF is a single N-channel MOSFET, designed to meet the requirements of power applications. The product is a high power enhancement mode MOSFET, which provides a good balance between RDS(on) and Qg. With its low gate threshold voltage and excellent thermal performance, it is a good choice for driving applications that require high current. As a result, this product is widely used in a variety of applications, ranging from automotive to industrial and consumer applications.
When used in power applications, IRF3707STRLPBF can provide a higher conduction current than most of the other types of MOSFETs, while its low on-resistance makes it an ideal choice for switching applications. This MOSFET can be used to drive high-current loads such as motor starters, lighting and other high power applications. Its high switching speed makes it suitable for high frequency switch mode applications as well. Furthermore, IRF3707STRLPBF’s low input capacitance and low threshold voltage make it a good choice for high frequency switching applications as well as for high speed analog circuits.
The working principle of IRF3707STRLPBF is that a certain amount of electric force is applied to the gate, which increases the voltage and causes the drain to source voltage (Vds) to rise. When Vds reaches the threshold voltage (Vt), the current begins to flow and the drain current (Id) is controlled by the gate. The MOSFET remains off until the gate voltage is reduced. At high gate voltages, the maximum drain current is controlled by the MOSFET, and no further increase in drain current will occur. Unlike a BJT or JFET device, the gate resistor has no effect on the current in a MOSFET. Therefore, the gate voltage is regulated by the amount of voltage applied to the gate, and the current is regulated by the level of the gate voltage.
In conclusion, IRF3707STRLPBF is a useful and versatile MOSFET, due to its low on-resistance, high switching speed and low input capacitance. Its high current capability and its ability to be used in a variety of applications makes it an ideal choice for a wide range of applications, from automotive to industrial and consumer applications. It is also useful in high frequency switch mode applications, as well as for high speed analog circuits. As such, it is a popular choice among engineers and manufacturers for many power and other applications.
The specific data is subject to PDF, and the above content is for reference
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