Allicdata Part #: | IRF3704ZCSTRLP-ND |
Manufacturer Part#: |
IRF3704ZCSTRLP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 67A D2PAK |
More Detail: | N-Channel 20V 67A (Tc) 57W (Tc) Surface Mount D2PA... |
DataSheet: | IRF3704ZCSTRLP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 57W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1220pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 7.9 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 67A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF3704ZCSTRLP is a 100V NMOS transistor designed for high power applications. It is one of International Rectifier\'s (IR) single MOSFET family of transistors, which offer the highest current and power levels for advanced power management applications. The IRF3704ZCSTRLP is specifically developed for the most advanced power management applications, with its high frequency operation, superior DC characteristics, and through-hole device package.
The IRF3704ZCSTRLP is well-suited for use in a variety of power management applications, ranging from motor control to power distribution. It is designed to handle applications that require high power and current, such as automotive, telecommunication, and renewable energy systems. Because of its low resistance and high transconductance, the IRF3704ZCSTRLP delivers excellent performance in high frequency, high power applications.
Application Field
The IRF3704ZCSTRLP is used in a number of different applications, from power supply control to power amplifier design. In power supply control applications, it is utilized to regulate the output voltage, current, and power of the power supply. The IRF3704ZCSTRLP can also be used in switching power converters and in motor controllers. It is also used in audio power amplifiers and in power transistors for switching applications.
In automotive applications, the IRF3704ZCSTRLP is used in engine control, air conditioning, and auxiliary power systems. Furthermore, it is also used in telecommunication systems and mobile devices. The IRF3704ZCSTRLP is also well-suited for solar power inverter designs and renewable energy systems.
Working Principle
The IRF3704ZCSTRLP operates in the full-bridge and half-bridge configurations, and can handle up to 100V. This means that it can be used in high-voltage applications where other transistors may not be suitable. The IRF3704ZCSTRLP works on the principle of voltage-controlled current switching. This means that when the input voltage exceeds a certain level, the transistor turns on and allows current to flow, and when the input voltage falls below this level, the transistor turns off and the current stops flowing.
The IRF3704ZCSTRLP also has a low gate-to-source capacitance, which allows it to be used in high-frequency applications. The low input capacitance helps to reduce EMI, while the low on-state resistance improves efficiency.
In addition, the IRF3704ZCSTRLP has excellent thermal performance. It has a simple, dual-stage thermal protection system which provides protection against short circuit and thermal overloading. This ensures that the device operates at the maximum temperature allowed, even when subjected to high operating currents. This ensures that the device remains reliable and provides optimal performance even in extreme conditions.
Overall, the IRF3704ZCSTRLP is a highly efficient, high-performance single MOSFET transistor that is suitable for a wide range of power management applications. It is well-suited for circuit designs that require high power, high frequency, and low gate-to-source capacitance. The device also features a low on-state resistance, excellent thermal performance, and simple, dual-stage thermal protection.
The specific data is subject to PDF, and the above content is for reference
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