Allicdata Part #: | IRF3805L-7PPBF-ND |
Manufacturer Part#: |
IRF3805L-7PPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 160A TO-263-7 |
More Detail: | N-Channel 55V 160A (Tc) 300W (Tc) Surface Mount D2... |
DataSheet: | IRF3805L-7PPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Supplier Device Package: | D2PAK (7-Lead) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7820pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 140A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF3805L-7PPBF, part of an industry-standard power MOSFET family of low-gate charge devices, is designed to handle load currents of up to 5A from a nominal voltage of 7V to +55V. It features an anodized surface for greater power density, is available in TO-220, D²PAK and I²PAK packages, and offers a wide range of on-resistance and gate charge values. The device also offers excellent thermal characteristics, thanks to its low on-resistance and low RDS(on) variation with voltage, temperature and time.
IRF3805L-7PPBF has a wide range of applications in amplifiers and drivers, switching regulators, PFC, DC-DC converters, power management and motor control. Due to their rugged construction and low on–resistance, they are suitable for use in both power switches and power drivers. In addition, because these transistors can operate over a wide temperature range, they can be used for applications such as mobile computing, GSM and small ICs.
One of the key features of the IRF3805L-7PPBF is its low-on-resistance, which allows it to be used as the main switch in a power management system with excellent efficiency. The device also features a temperature-compensated load switch, which allows for reliable operation under extreme conditions. Additionally, the gate charge value is relatively low compared to other power MOSFETs, so it can be used for low-power applications.
The working principle behind IRF3805L-7PPBF is relatively simple. The device is composed of three different elements: a source, a gate, and a drain. When a voltage is applied to the gate, current starts to flow into the source and out of the drain, while the voltage applied to the gate controls the amount of current flowing. This is known as the principle of MOSFET amplification. The greater the voltage applied to the gate, the higher the amount of current that will flow through the device.
In addition, the device features a built-in thermal protection feature that helps prevent the device from overheating. This also helps ensure reliable operation, as it prevents the device from being subjected to extreme temperatures or excessive current that could cause damage.
Overall, IRF3805L-7PPBF is a reliable and efficient power MOSFET that can be used for a wide range of applications due to its low on-resistance and excellent thermal characteristics. The device is available in different packages and offers a wide range of operating temperatures, making it an ideal choice for power management applications.
The specific data is subject to PDF, and the above content is for reference
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