Allicdata Part #: | IRF3707ZSTRLP-ND |
Manufacturer Part#: |
IRF3707ZSTRLP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 59A D2PAK |
More Detail: | N-Channel 30V 59A (Tc) 57W (Tc) Surface Mount D2PA... |
DataSheet: | IRF3707ZSTRLP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 57W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1210pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 59A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF3707ZSTRLP is a typicall MOSFET (Metal Oxide Semiconductor FET). As the single package device, it was developed to be the high-density application solutions in various fields, from battery management and power-supply control through to automotive and home appliance. This device combines the performance of an advanced field-effect MOSFET with significant energy efficiency.
The IRF3707ZSTRLP has an excellent load switching capability and great energy efficiency, also extended avalanche energy for better high voltage operation. It has a low total gate charge (Qg-total) and internal Schottky diode that support high side drive applications. Embedded Schottky diode helps reduce body diode conduction and improve switching performance. The device also features low total gate charge (Qg-total) and low K\' factors for improved efficiency over other MOSFETs.
The IRF3707ZSTRLP is designed to work within wide range temperature range between -40℃ and 150℃, and its rated voltage is 55V. It also has excellent ESD protection with an Internal ESD Structure that provides an ESD withstanding voltage of up to 2kV. This FET is designed with 18V typical Rds(on).
In terms of the working principle, the IRF3707ZSTRLP is controlled by a signal voltage applied to its gate. The device acts as an electronic switch, making the connection between source and drain when the gate voltage reaches a certain threshold. When a voltage is applied to the gate, the device creates a conducting channel between source and drain, allowing current to move from source to drain. The drain current through the MOSFET can be controlled by varying the gate-to-source voltage.
IRF3707ZSTRLP can be used in wide range of field, including power-supply control, audio equipment, automotive electronics, DC-DC conversion, motor control, and battery management among others. It can be used to create the power circuit control, battery management and power-supply control solutions in those fields.
In conclusion, the IRF3707ZSTRLP is a highly efficient, single package FET device with excellent switching performance and ESD protection. Its applicability across several fields gives it a wide range of opportunities and applications. Its low power consumption and highly efficient device also makes it ideal for energy efficient applications.
The specific data is subject to PDF, and the above content is for reference
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