Allicdata Part #: | IRF300P227-ND |
Manufacturer Part#: |
IRF300P227 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 300V 50A TO247AC |
More Detail: | N-Channel 300V 50A (Tc) 313W (Tc) Through Hole TO-... |
DataSheet: | IRF300P227 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 270µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AC |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 313W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4893pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 107nC @ 10V |
Series: | StrongIRFET™ |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRF300P227 is a specific type of insulated-gate bipolar transistor (IGBT) that utilizes a low voltage gate signal and can handle a high amount of power. IGBTs are usually used in the control of various motors and power converters. IRF300P227 is a N-channel MOSFET that has an on-state resistance of 243 mΩ and an avalanche rating of almost 2000V.
MOSFET stands for metal oxide semiconductor field effect transistor. It is an electronic component that is widely used in the control of electrical current and is able to vary the current flow depending on the voltage it is exposed to. MOSFETs are also highly efficient when it comes to controlling large amount of power. They also offer low power losses and high power output, making them ideal for various electronics applications.
IRF300P227 is a single-chip device that operates by utilizing the electrostatic conductivity principle of insulating gate. When a positive voltage is applied to the gate, the resistance between the source and drain terminals is decreased, allowing current to flow. When the voltage to the gate is removed, the resistance between the drain and source terminals increases and the current flow stops. This process is repeated when the voltage to the gate is pulsed in order to provide accurately-controlled current flow.
IRF300P227 is a type of N-channel MOSFET that is highly popular for its low on-state resistance and high power ratings. It is used in a variety of applications including motor control, lighting control, high power switching, and DC-DC converter control. It is also used in amplifiers and DC-AC inverters. Since it is built from a single chip, it is easier to incorporate into any existing circuit design.
IRF300P227 can also be used to control AC motors. It is used in power inverters to control the flow of current and adjust the speed of AC motors. It is also used in light dimmer circuits and switching applications where the control of voltage and current needs to be precise. It is also popular for its high reliability and low cost.
IRF300P227 is highly capable of controlling a wide range of current. This includes signals as low as 0.5mA and as high as 32A. The drain-source breakdown voltage is also high enough to handle high-current applications without difficulty. It is also able to switch at frequencies up to 100kHz.
IRF300P227 is a device that offers a wide range of features and performance. It is highly reliable, offering excellent heat dissipation and low on-state resistance. It is also capable of handling really high currents while remaining efficient. It is also relatively inexpensive, making it a popular choice for various applications.
The specific data is subject to PDF, and the above content is for reference
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