Allicdata Part #: | IRF3704ZCLPBF-ND |
Manufacturer Part#: |
IRF3704ZCLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 67A TO-262 |
More Detail: | N-Channel 20V 67A (Tc) 57W (Tc) Through Hole TO-26... |
DataSheet: | IRF3704ZCLPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 57W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1220pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 7.9 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 67A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF3704ZCLPBF is a type of Field Effect Transistor (FET) that falls within the category of Single MOSFET devices. It is a fast switching type of power field-effect transistor, employing advanced processing techniques to provide reliable off-state performance. This device is widely used in power management applications where it can provide efficient and reliable power delivery and control.
The IRF3704ZCLPBF is a high-power, high-performance, high-voltage N-type MOSFET. It is constructed using advanced process techniques to produce a device that is capable of operating at high current and power levels over long periods of time. It is built with a unique lead structure which allows it to be soldered on to a board without the need for external accessories such as heat sinks or special connectors.
The device\'s performance is maximized by using an effective thermal and electrical design. This means that it is capable of efficiently dissipating heat generated during operation, and is designed to provide a high level of protection against short-circuiting, thermal runaway, and other faults that could otherwise damage the device.
The device is also designed to be easily interfaced and integrated into a variety of power management systems. In addition, its simple construction and operation make it well-suited for use in high-density power management systems, where it can provide a reliable and efficient means of controlling power delivery.
In terms of its working principle, the IRF3704ZCLPBF is an N-type MOSFET, meaning that it has an N-type channel region that is normally closed, which is then operated by an electrical gate bias voltage. When the gate bias voltage is applied, it will cause the N-type channel to open, thus allowing current to flow through the device. This mechanism can be used to control the flow of current in different circuits and power management systems, depending on the particular application.
In addition to its use in power management systems, the IRF3704ZCLPBF can also be used in a variety of other applications. These include radio-frequency amplifiers, switch mode power supplies, and DC-DC converters. It is also useful for DC power switching applications, as it is capable of providing low on-resistance and high blocking voltage. The device also offers excellent thermal stability and transient response, making it well-suited for automotive and industrial applications.
The IRF3704ZCLPBF is an ideal choice for those looking for a reliable and efficient power management solution. With its simple construction and operation, it can easily be integrated into a wide range of applications, providing reliable power delivery and control. Its high current and power capabilities make it well-suited for a variety of power management systems, and it is designed to provide a high level of protection against short-circuiting and other faults.
The specific data is subject to PDF, and the above content is for reference
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