IRF3710ZLPBF Allicdata Electronics
Allicdata Part #:

IRF3710ZLPBF-ND

Manufacturer Part#:

IRF3710ZLPBF

Price: $ 1.23
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 59A TO-262
More Detail: N-Channel 100V 59A (Tc) 160W (Tc) Through Hole TO-...
DataSheet: IRF3710ZLPBF datasheetIRF3710ZLPBF Datasheet/PDF
Quantity: 48
1 +: $ 1.10880
10 +: $ 0.98280
100 +: $ 0.77660
500 +: $ 0.60224
1000 +: $ 0.47546
Stock 48Can Ship Immediately
$ 1.23
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 160W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 18 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRF3710ZLPBF is a third-generation N-channel enhancement-mode power field-effect transistor (FET). It belongs to the transistors - FETs, MOSFETs - Single classification.

It features low drain-source on-state resistance, low gate charge and fast switching speed. As a result, IRF3710ZLPBF is widely used in power conversion applications, such as high-side switching in buck converters, boost converters and zero voltage switching in half-bridge converters.

Principle of operation

IRF3710ZLPBF has five terminals: gate, drain, source, drain and gate. The gate terminal is used to control the drain-source current, which is the most fundamental and basic working state of Field-Effect Transistor. Its gate-source voltage is used as a “switch” to turn the drain-source current on or off.

When the positive voltage is applied to the gate terminal, it forms an inversion layer in the semiconductor channel between the source region and the drain terminal. This will allow the electrons in the channel between the source and drain to move freely, thus increasing the current from the source to the drain and leading to "on". When the gate voltage is negative, the inversion layer will disappear and the current from the source to the drain will decrease until the current is "off". Thus, the gate voltage can be used to control the drain-source current on and off, thereby controlling the electronic switch.

Application field

IRF3710ZLPBF is widely used in switching power supplies and motor drivers. In particular, as a high-side switch in buck and boost converters, it can reduce switching losses and improve the efficiency of the converter.

In addition, it can also be used in motor drivers to control motor speed, light dimmer controllers, TV and display power management, etc. It has a wide range of applications in various industries, such as consumer electronics, communications, industrial equipment, automotive and medical.

Conclusion

In conclusion, IRF3710ZLPBF is a third-generation N-channel enhancement-mode power field-effect transistor with low source-drain on-state resistance, low gate charge and fast switching speed. It can be used in high-side switching in buck converters, boost converters, motor drivers, light dimmers, TV and display power management, etc.

The specific data is subject to PDF, and the above content is for reference

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