Allicdata Part #: | IRF3710ZLPBF-ND |
Manufacturer Part#: |
IRF3710ZLPBF |
Price: | $ 1.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 59A TO-262 |
More Detail: | N-Channel 100V 59A (Tc) 160W (Tc) Through Hole TO-... |
DataSheet: | IRF3710ZLPBF Datasheet/PDF |
Quantity: | 48 |
1 +: | $ 1.10880 |
10 +: | $ 0.98280 |
100 +: | $ 0.77660 |
500 +: | $ 0.60224 |
1000 +: | $ 0.47546 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 35A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 59A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IRF3710ZLPBF is a third-generation N-channel enhancement-mode power field-effect transistor (FET). It belongs to the transistors - FETs, MOSFETs - Single classification.
It features low drain-source on-state resistance, low gate charge and fast switching speed. As a result, IRF3710ZLPBF is widely used in power conversion applications, such as high-side switching in buck converters, boost converters and zero voltage switching in half-bridge converters.
Principle of operation
IRF3710ZLPBF has five terminals: gate, drain, source, drain and gate. The gate terminal is used to control the drain-source current, which is the most fundamental and basic working state of Field-Effect Transistor. Its gate-source voltage is used as a “switch” to turn the drain-source current on or off.
When the positive voltage is applied to the gate terminal, it forms an inversion layer in the semiconductor channel between the source region and the drain terminal. This will allow the electrons in the channel between the source and drain to move freely, thus increasing the current from the source to the drain and leading to "on". When the gate voltage is negative, the inversion layer will disappear and the current from the source to the drain will decrease until the current is "off". Thus, the gate voltage can be used to control the drain-source current on and off, thereby controlling the electronic switch.
Application field
IRF3710ZLPBF is widely used in switching power supplies and motor drivers. In particular, as a high-side switch in buck and boost converters, it can reduce switching losses and improve the efficiency of the converter.
In addition, it can also be used in motor drivers to control motor speed, light dimmer controllers, TV and display power management, etc. It has a wide range of applications in various industries, such as consumer electronics, communications, industrial equipment, automotive and medical.
Conclusion
In conclusion, IRF3710ZLPBF is a third-generation N-channel enhancement-mode power field-effect transistor with low source-drain on-state resistance, low gate charge and fast switching speed. It can be used in high-side switching in buck converters, boost converters, motor drivers, light dimmers, TV and display power management, etc.
The specific data is subject to PDF, and the above content is for reference
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