Allicdata Part #: | IRF3709ZSTRLPBF-ND |
Manufacturer Part#: |
IRF3709ZSTRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 87A D2PAK |
More Detail: | N-Channel 30V 87A (Tc) 79W (Tc) Surface Mount D2PA... |
DataSheet: | IRF3709ZSTRLPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2130pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 87A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF3709ZSTRLPBF is a N Channel MOSFET that is typically used in portable electronics, such as laptop computers, cell phones, and handheld devices. It has a small form factor and is able to operate with gate voltages between 2V and 8V.
The IRF3709ZSTRLPBF is a logic level MOSFET, meaning that it can be used for switching applications that require low gate drive voltages and also for low on-state current flow and low on-state resistance. The IRF3709ZSTRLPBF is a low-capacitance MOSFET, making it suitable for high frequency applications such as video, audio, or HF communications. It has a compact SOT-23 package, which means it takes up minimal space on the PCB.
The IRF3709ZSTRLPBF has two voltage ratings, one at the drain and one at the source, and the two ratings are usually the same. The drain-to-source voltage, VDS, can range from 0 to 50V. The maximum drain current, ID, is usually limited to 0.9A in the SOT-23 package. The maximum drain-source on-state resistance, RDS(on), is usually limited to 0.20 Ohms, meaning that it is extremely efficient at dissipating power.
The working principle of the IRF3709ZSTRLPBF is based on the flow of electrons. This type of transistor, like other types of MOSFETs, requires a voltage applied to its gate in order to control or regulate the flow of current between its source and drain. When the gate voltage is applied, it creates a strong electric field between the source and drain, which, in turn, causes a current to flow between them. This, in turn, allows the transistor to act like a switch, controlling the flow of current. Depending on the type of application, the gate voltage can be either low (0V) or high (5V), which will in turn control whether the switch is “open” or “closed”.
The IRF3709ZSTRLPBF is a versatile and highly efficient MOSFET, making it an ideal choice in a variety of applications. It is suitable for low-side, high-side and load switch operations, as well as for power management and switching applications. The low power consumption and low on-state resistance of the IRF3709ZSTRLPBF mean that it can provide substantial power savings when used in portable devices. The small form factor of the IRF3709ZSTRLPBF also makes it easy to fit on tight PCBs. By using the IRF3709ZSTRLPBF, designers can achieve improved system performance, lower system cost, and improved reliability.
The specific data is subject to PDF, and the above content is for reference
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