Allicdata Part #: | IRF3315S-ND |
Manufacturer Part#: |
IRF3315S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 21A D2PAK |
More Detail: | N-Channel 150V 21A (Tc) 3.8W (Ta), 94W (Tc) Surfac... |
DataSheet: | IRF3315S Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 94W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 95nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 82 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF3315S has a high current, low ON resistance, and fast switching performance. It is classified as a single power MOSFET (metal oxide semiconductor field effect transistor) which is commonly used in power supply and applied to various electronic equipment such as telecoms, computers, home application, automotive, etc. This paper introduces the application field and working principle of IRF3315S.
1 Application Field of IRF3315S
IRF3315S is a high power MOSFET that mounted in a totem pole packing. It consists of two N-channel enhancement mode MOSFETs in a single package. Its structure is simple and effective and combines two N-channel MOSFETs in a single package in which one MOSFET is connected to the drain, the source to the other MOSFET. This method eliminates the need for a separate body diode and has applications in automotive, industrial, consumer, etc.
In automotive application, IRF3315S used in HVAC (heating, ventilation, and air-conditioning) serves as an efficient power switch to turn on and off fan, compressor, and other DC motors. In industrial electronics, the MOSFET allows designers to implement devices such as variable-speed motor control, battery-powered equipment, and digital switching. In consumer electronics, IRF3315S is used to control the speed of electric fans and other AC/DC devices that require a low-voltage power switch.
2 Working Principle of IRF3315S
The IRF3315S utilizes a vertical double-sided N-channel MOSFET power switch, resulting in low ON resistance, fast switching and output capacities of up to 30A. Its main purpose is to control the on/off state of an electrical device by switching a MOSFET from its cutoff state to its saturation state. Its structure mainly consists of a body diode, source, gate, and drain. A source and drain are connected to the body diode and the gate is used to control the current flow between both points.
When the gate voltage is raised to the MOSFET\'s threshold voltage, it reduces the resistance between the source and the drain, and current will flow between them — this is the saturation state. When the voltage is substantially reduced, the MOSFET\'s resistance increases and current stops flowing — this is the cutoff state. A MOSFET can switch faster because it has a higher input capacitance compared to a bipolar junction transistor (BJT).
In conclusion, IRF3315S is an excellent choice for power supply applications such as HVAC and industrial control devices. It is not only fast switching but also has low ON resistance and high current. Moreover, it can handle up to 30A while the size and cost are always taken into consideration.
The specific data is subject to PDF, and the above content is for reference
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