IRG8B08N120KDPBF

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IRG8B08N120KDPBF is a IGBT (Insulated Gate Bipolar Transistor) with a single trench structure embedded in the chip. It belongs to the Transistors - IGBTs - Single category.

IRG8B08N120KDPBF is widely used in digital circuits, such as automotive and industrial control systems, digital signal processors, and high-power switch mode power supplies. In addition, it is also widely used for removing high-frequency switching noise in electric power factor correction and battery-driven inverters.

This kind of IGBT has a powerful electric strength, low loss and high reliability that make it an essential component of many digital devices and electric machines. Moreover, its easily availability and cost-effective price also contribute to its popularity among electronics manufacturers.

The working principle of IRG8B08N120KDPBF is rather straightforward. When the electric current passes through its gate, the chip’s P-N junction gets polarized and produces a current that can control higher voltage and power. This controls the conducting force of the IGBT and consequently its overvoltage, inrush current and power supply.

The IGBT works by utilizing the mixed features of MOSFETs (Metal Oxide Semiconductor Field effect Transistors) and BJT (Bipolar Junction Transistors). Firstly, the gate terminal’s signal is used as the gate electrode, responsible for controlling the electric current controlling the junction. Secondly, the Collector and Emitter electrodes are used to control the current. In summary, when the voltage at the gate electrode is increased, the amount of electric current that can flow between the Collector and Emitter electrodes increases, thus allowing more power and current to be handed away.

One of the major advantages of IRG8B08N120KDPBF is its high voltage and current capacity. Its voltage of up to 1400V make it capable of sustaining heavy loads and switching high-power electric circuits. Moreover, its current capability of up to 120A make it impervious to short-circuits and highly efficient in parallel or serial applications.

In terms of safety and protection, IRG8B08N120KDPBF has several features that ensure the stable and long-term operation of electric systems. Firstly, its Drain-Source Reverse Blocking Voltage can be up to 1400V, preventing short-circuit or over-voltage issues. Secondly, its low On-Resistance is able to handle continuous high currents for improved system efficiency. Thirdly, its maximum junction temperature is up to 175℃, highly resistant to extreme temperatures.

In conclusion, IRG8B08N120KDPBF is a highly efficient and reliable IGBT with single trench structure that is suitable for a wide range of applications, such as automobile and industrial control systems, high-power switch mode power supplies, digital signal processors and more. Despite its small physical size, it offers high voltage and current capacity, low On-Resistance, high electric strength and stable operation over long time periods.

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