Allicdata Part #: | IRG8CH15K10F-ND |
Manufacturer Part#: |
IRG8CH15K10F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V ULTRA FAST DIE |
More Detail: | IGBT 1200V Surface Mount Die |
DataSheet: | IRG8CH15K10F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 10A |
Switching Energy: | -- |
Input Type: | Standard |
Gate Charge: | 65nC |
Td (on/off) @ 25°C: | 15ns/170ns |
Test Condition: | 600V, 10A, 10 Ohm, 15V |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
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The IRG8CH15K10F is a single, insulated-gate bipolar transistor (IGBT) device. It is commonly used in power electronic applications such as motor drives, renewable energy systems, and power supplies. In this article, we will look at the application field and operating principles of the IRG8CH15K10F.
General Description: The IRG8CH15K10F is a silicon-based IGBT that uses a metal-oxide-semiconductor (MOS) structure. It has a rated collector-emitter voltage of 1,500V and a rated collector current of 10A. It has a non-zero gate-emitter voltage of ± 20V. The switching speed of the device is relatively fast, with a maximum turn-on time of 11μs and a maximum turn-off time of 9μs. It has an on-resistance of 1.3mΩ and an off-resistance of >25mΩ. The IRG8CH15K10F is suitable for low- and medium-frequency operation.
Application Fields: The IRG8CH15K10F is commonly used in high-power motor drives and in power supplies. It is also used as a part of AC-DC and DC-DC converters, in renewable energy systems, and in solar inverters. The high switching speed of the device makes it ideal for use in high-frequency applications. Its low on-resistance and wide range of operation make it suitable for motor control applications. Additionally, with its inherent ruggedness and superior thermal performance, it is suitable for use in harsh industrial environments.
Working Principle: The IRG8CH15K10F works by providing a path for current flow between its collector and emitter terminals when a sufficient positive voltage is applied to the gate terminal. It works on a three-terminal voltage-controlled structure, withable to provide control over the current flow between the collector and emitter terminals. When a positive voltage is applied to the device\'s gate terminal, it is turned on and starts to conduct current from its collector to its emitter. This conduction of current occurs as long as a sufficient positive voltage is applied to the gate terminal. When the voltage is removed, the device is turned off, and no current is conducted. By controlling the voltage applied to the gate of the device, the amount of current flowing can be controlled.
Conclusion: The IRG8CH15K10F is a single IGBT device with a rated collector-emitter voltage of 1,500V and a rated collector current of 10A. It has a wide range of applications in power electronics, motor drives, and renewable energy systems, along with its usage in AC-DC and DC-DC converters. Its working principle is based on a three-terminal voltage-controlled structure, wherein it can provide control over the amount of current flowing between the collector and emitter terminals. Though it is most commonly used in low- and medium-frequency applications, its high switching speed makes it suitable for use in higher-frequency applications as well.
The specific data is subject to PDF, and the above content is for reference
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