Allicdata Part #: | IRG8P50N120KDPBF-ND |
Manufacturer Part#: |
IRG8P50N120KDPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 80A 305W TO-247AC |
More Detail: | IGBT 1200V 80A 350W Through Hole TO-247AC |
DataSheet: | IRG8P50N120KDPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Switching Energy: | 2.3mJ (on), 1.9mJ (off) |
Supplier Device Package: | TO-247AC |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 170ns |
Test Condition: | 600V, 35A, 5 Ohm, 15V |
Td (on/off) @ 25°C: | 35ns/190ns |
Gate Charge: | 315nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 350W |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 35A |
Current - Collector Pulsed (Icm): | 105A |
Current - Collector (Ic) (Max): | 80A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | -- |
Part Status: | Obsolete |
Packaging: | Tube |
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Introduction to IRG8P50N120KDPBF Transistors - IGBTs - Single
The IRG8P50N120KDPBF is a type of Insulated Gate Bipolar Transistor (IGBT) that has one collector, one emitter and one gate. This type of IGBT has been widely used in various fields and applications. This article will focus on the application field, working principle and characteristics of the IRG8P50N120KDPBF.
Application Field of IRG8P50N120KDPBF
The IRG8P50N120KDPBF is a type of IGBT that is suitable for a wide range of applications such as motor drives, welding and other electric power applications, motor control systems, uninterruptible power supplies, home appliances and many other applications. The IRG8P50N120KDPBF can also be used in high power switching systems such as solar panel applications, battery management systems and vehicle powertrain systems. Moreover, the IRG8P50N120KDPBF can be used as switching and peripheral driver stages, active media-frequency amplifiers, active high-speed attenuators, active bias networks and linear amplifiers.
Working Principle of IRG8P50N120KDPBF
The IRG8P50N120KDPBF is an IGBT with one collector and one emitter. The working principle of the IRG8P50N120KDPBF is based on the combination of a bipolar transistor and a field-effect transistor. The concept behind the IGBT is that the positive operation of the transistor controls the current flow between the collector and emitter. The gate voltage, which is the controlling voltage of the IGBT, controls the electron flow, which in turn determines the current flow between the collector and emitter. The direction of current flow can be dictated by the direct or reverse biasing of the IGBT.
Characteristics of the IRG8P50N120KDPBF
The IRG8P50N120KDPBF has several key characteristics that make it a viable component for many different applications. Firstly, the maximum current rating for the IRG8P50N120KDPBF is 75A. This rating makes the IGBT suitable for a wide range of applications. Secondly, the IRG8P50N120KDPBF has a relatively low gate-collector capacitance of 2.90pF and a low total gate charge of 9.0nC. This makes the IGBT suitable for high switching applications. Finally, the IGBT has a collector-emitter breakdown voltage of 1200V, making it suitable for high voltage applications.
Conclusion
The IRG8P50N120KDPBF is a type of IGBT with one collector and one emitter that is suitable for a wide range of applications. Its characteristics, such as its high current rating, low gate-collector capacitance and low total gate charge, make it suitable for high switching applications and high voltage applications. This article has provided an overview of the application field, working principle and characteristics of the IRG8P50N120KDPBF.
The specific data is subject to PDF, and the above content is for reference
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