![IRG8P08N120KDPBF Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | IRG8P08N120KDPBF-ND |
Manufacturer Part#: |
IRG8P08N120KDPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 15A 89W TO-247AC |
More Detail: | IGBT 1200V 15A 89W Through Hole TO-247AC |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Switching Energy: | 300µJ (on), 300µJ (off) |
Supplier Device Package: | TO-247AC |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 50ns |
Test Condition: | 600V, 5A, 47 Ohm, 15V |
Td (on/off) @ 25°C: | 20ns/160ns |
Gate Charge: | 45nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 89W |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 5A |
Current - Collector Pulsed (Icm): | 15A |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | -- |
Part Status: | Obsolete |
Packaging: | Tube |
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IRG8P08N120KDPBF is an insulated gate bipolar transistor (IGBT) module for increased power efficiency and improved transmittance, particularly for high-voltage direct current (HVDC) applications. It is a single IGBT module, and is suitable for a wide range of uses from high current, high voltage, and high-power applications.
The IRG8P08N120KDPBF IGBT is an innovative and reliable device that offers improved power efficiency and improved transmission quality by using a single IGBT element rather than a combination of transistors. This enables a higher power output than traditional components and also a much smaller size than multiple transistors.
The IGBT’s working principle is a combination of a BJT (bipolar junction transistor) and a FET (field-effect transistor), to create a module that is capable of controlling a high level of current and voltage at the same time. A BJT is a device that uses two p-type and n-type doped semiconductor material, separated by a junction, to control the current. A FET uses a gate to control the current. When the gate is activated, current flows between the semiconductor layers. The IGBT combines both these technologies to control current in an effective and efficient manner.
In addition to high-voltage direct current (HVDC) applications, the IRG8P08N120KDPBF can also be used in various other applications such as motor control systems and inverters. It can be used in industrial, automotive, and consumer products, where it has been proven to provide increased power efficiency and improved quality of the transmitted signal.
The IRG8P08N120KDPBF is designed with a highly efficient HVCA circuit, which is composed of optimized junction temperature, increased rated current, improved surge capability, and a highly precise temperature behavior. It also offers a wide range of protection features, ensuring reliable operation even in the most demanding applications.
In summary, the IRG8P08N120KDPBF is an IGBT module designed to meet the high current, high voltage, and high-power requirements of applications in multiple fields. It combines the features of BJT’s and FET’s to achieve increased power efficiency and improved quality of the transmitted signal, as well as protection features to ensure reliable operation.
The specific data is subject to PDF, and the above content is for reference
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