IRG8P40N120KD-EPBF

Switching Energy:	1.6mJ (on), 1.8mJ (off)
Supplier Device Package:	TO-247AD
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	80ns
Test Condition:	600V, 25A, 10 Ohm, 15V
Td (on/off) @ 25°C:	40ns/245ns
Gate Charge:	240nC
Input Type:	Standard
Series:	--
Power - Max:	305W
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 25A
Current - Collector Pulsed (Icm):	75A
Current - Collector (Ic) (Max):	60A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	--
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The IRG8P40N120KD-EPBF is a Insulated Gate Bipolar Transistor (IGBT) module designed specifically for high-speed and low-noise industrial control applications. It is a single-channel device that features low on-state voltage (VCE), low gate charge (QG) and high speed turn-on/turn-off switching capabilities. This makes the IRG8P40N120KD-EPBF an ideal component for many industrial control applications such as motor drives, UPS and inverter controls.

Applications

The IRG8P40N120KD-EPBF can be used in a wide range of control applications, due to its features such as low on-state voltage, low gate charge and high-speed switching capabilities. The IGBT module is also designed to handle high energy, which makes it suitable for use in industrial applications where energy efficiency is important. It is mainly used in motor drives, inverter controls and UPS. It can be used for a variety of motor control applications, such as fans, pumps, AC motors, DC motors and brushless DC (BLDC) motors. It can also be used in the control of electric vehicles (EVs), hybrid electric vehicles (HEVs) and general industrial automation applications. Furthermore, the device is suitable for high speed switching operations, making it ideal for the operation of high frequency switches and powering light dimmers.

Working Principle

The working principle of the IRG8P40N120KD-EPBF is based on the bi-directional switching characteristics between a bipolar junction transistor (BJT) and a field-effect transistor (FET), both of which are operated using insulated gate control signals. The IGBT module contains both a BJT and an FET connected in series, with the gate of one connected to the emitter of the other. This allows the electric current to flow in both directions, depending on the polarity of the applied voltage. When a positive voltage is applied to the gate, it turns the IGBT module “on”, allowing electric current to flow from the collector to the emitter. When the gate voltage turns negative, the IGBT module turns “off” and the electric current ceases to flow between the collector and the emitter. This changing voltage at the gate is responsible for the bi-directional switching characteristics of the IGBT module.

Advantages

The IRG8P40N120KD-EPBF has many advantages when compared to other IGBTs and transistors. Its low on-state voltage, low gate charge and high speed switching capabilities make it an ideal device for a range of industrial applications. Moreover, the device is designed to withstand high energy levels, making it suitable for energy-efficiency related applications. Another advantage of the IRG8P40N120KD-EPBF is its price. Even though the device is relatively expensive, its features and capabilities make it well worth the money. As a result, it is one of the most cost-effective solutions for industrial control applications.

Conclusion

In conclusion, the IRG8P40N120KD-EPBF is a single-channel IGBT module that is designed to handle high energy and provide high-speed switching capabilities. It features low on-state voltage, low gate charge and is suitable for a range of control applications including motor drives, inverters and UPS. Additionally, the device is cost-effective and offers excellent value for industrial control applications.

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