IRG8CH137K10F Discrete Semiconductor Products

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IGBTs (Insulated Gate Bipolar Transistors) are a type of power semiconductor transistor used in high power applications such as lighting and heating control.The IRG8PH137K10F is a single IGBT module manufactured by Infineon Technologies, and is one of the many products the company has released for various power applications.

IRG8PH137K10F Application Fields

The IRG8PH137K10F IGBT module is designed for applications requiring high power switching and high efficiency, such as solar and wind energy systems, electric vehicles, home appliances, industrial machinery, lighting systems and so on.

The product is suitable for switching applications requiring high voltage and high current, and is especially useful in power conversion applications such as battery charging, motor control and high speed switching. It is also used in motor drive and PFC circuits, as well as applications like UPS systems, solar inverters and voltage regulator modules.

IRG8PH137K10F Working Principle

The IRG8PH137K10F IGBT module is a Single IGBT, meaning that it contains a single IGBT transistor. This type of transistor combines the advantages of both a bipolar junction transistor (BJT) and a field effect transistor (FET). The IGBT offers high current and voltage capabilities, along with improved switching speeds and reduced losses.

The working principle of the IRG8PH137K10F IGBT module is based on the principle of insulated gate turbulence. This is a process that occurs when an electric current is passed through an insulated gate. The current causes an oscillation, which produces heat by electro-thermal oscillations. This process enables the IGBT to achieve high levels of power efficiency and switching speeds.

The IRG8PH137K10F IGBT module is able to achieve a blocking voltage of up to 1,500V and a maximum current rating of 37A. The device is also very efficient, with an 8kHz switching frequency and a maximum efficiency rating of over 99%. The insulated gate turbulence process used in this module ensures fast switching times and low switching loss, enabling higher system efficiency.

Conclusion

The IRG8PH137K10F IGBT module is a single module IGBT ideal for applications requiring high power switching and high efficiency. The module features a blocking voltage of up to 1,500V and a maximum current rating of 37A, along with an 8kHz switching frequency and a maximum efficiency rating in excess of 99%. The working principle of the module is based on the principle of insulated gate turbulence, which enables fast switching times and low switching loss, providing higher system efficiency.

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