IRG8CH76K10F

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IGBTs (Insulated Gate Bipolar Transistors) are power semiconductor devices that offer improved performance over conventional insulated gate transistors. The IRG8CH86K10F is a single IGBT device specifically designed for medium to high voltage applications. It is designed to provide reliable, efficient and cost-effective switching in a wide range of applications.

Features and Benefits

• Low conduction loss and low power loss.
• High speed transient and high current handling capability.
• High current/voltage capability with low switching losses.
• Low saturation voltage.
• High surge capability.
• Short circuit withstand capability.
• Ease of assembly.

Applications

The IRG8CH86K10F is well suited for medium voltage motor drives, induction or synchronous motor drives, uninterruptible power supplies (UPS), AC/DC converters, welding equipment, rectifiers and DC/DC Converters. The device is also suitable for use in consumer electronics, white goods, induction heating, UPS, UPS systems, renewable energy, solar inverters and industrial electronics.

Device Construction

The device is constructed in a 6 segment package, with a resistor and diode in the emitter leg of the device. The back surface is insulated and the top surface is designed to be solderable. The device is designed to reduce electrical power losses while providing a durable and reliable switching solution.

Working Principle

The working principle of the IRG8CH86K10F is based on the controlled application of electrical current. The device consists of two main components, an insulated gate and a power igbt. The gate is made up of two terminals, one connected to a voltage source and one connected to the device. An electrical current is passed through the gate, and upon reaching a predetermined voltage level the power igbt is triggered, allowing the current to flow.

Once the voltage level is reached, the current passes through the power igbt, causing it to turn on, and then subsequently turn off after a predefined time. This process is repeated until the desired operation is complete. The speed of this process is determined by the voltage level at which the power igbt is triggered and the power handling capacity of the device.

The device is designed to switch on and off quickly, while still maintaining a low power loss and a high current capacity. This makes the device well suited for power switching applications such as motor drives, AC/DC converters, and inverters. The device has a low on-state voltage drop and is capable of withstanding high surge currents and surge voltages.

Conclusion

The IRG8CH86K10F is a single IGBT device specifically designed for medium to high voltage applications. The device is well suited for motor drives, AC/DC converters, and inverters. It offers low conduction and power losses, high speed transient, high current handling capability and high surge capability. The device has a low on-state voltage drop and is capable of withstanding high surge currents and surge voltages. This makes it an ideal choice for a wide range of applications.

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