Allicdata Part #: | IRG8CH106K10F-ND |
Manufacturer Part#: |
IRG8CH106K10F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V 110A DIE |
More Detail: | IGBT 1200V Surface Mount Die |
DataSheet: | IRG8CH106K10F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 110A |
Switching Energy: | -- |
Input Type: | Standard |
Gate Charge: | 700nC |
Td (on/off) @ 25°C: | 80ns/380ns |
Test Condition: | 600V, 110A, 1 Ohm, 15V |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
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Insulated Gate Bipolar Transistors (IGBTs) have been around for some time and can be found in a variety of practical applications. One of the most popular IGBTs is the IRG8CH106K10F. This IGBT is a single transistor package and is popular due to its low on-state voltage and high switching frequency. This article will discuss the application field and working principle of the IRG8CH106K10F.
Application Field
The IRG8CH106K10F is most commonly used in automotive applications. It is well known for being able to handle higher power levels than other types of transistors, making it well suited for switching high current loads. It is also used for motor control applications, as its low saturation voltage and fast switching speed make it ideal for controlling motor speed. Additionally, the IRG8CH106K10F is often used in high voltage converters and inverters, as it is rated to handle up to 600 volts of continuous operation.
Aside from its automotive applications, the IRG8CH106K10F can be used in many other types of systems. It is suitable for use in power supplies, solar power systems, and power distribution systems. Additionally, the IRG8CH106K10F is found in motor drives, communication equipment, and UPS systems. All in all, the IRG8CH106K10F is an extremely versatile IGBT that is capable of handling a variety of applications.
Working Principle
The IRG8CH106K10F is an N-channel IGBT, meaning that it has the characteristics of both a MOSFET and a bipolar transistor. This type of IGBT is controlled through the gate-source voltage, which is used to regulate the flow of current from the drain to the source. When the gate-source voltage is low, the device is in the off-state, meaning no current can flow through it. When the gate-source voltage is increased, the device will enter the on-state, allowing current to flow.
The IRG8CH106K10F has a low on-state voltage, meaning that the voltage drop between the source and the drain is low when the device is in the on-state. This reduces power loss and makes the device more efficient. Additionally, the IRG8CH106K10F has a fast switching speed, meaning that it can rapidly switch between the off and on-state. This makes the device well suited for controlling motor speed and other high speed applications.
The IRG8CH106K10F is a reliable IGBT that is capable of handling high power levels, high speeds, and high voltages. Its low saturation voltage, fast switching speed, and low on-state voltage make it an ideal choice for automotive, motor control, and power conversion applications. The IRG8CH106K10F is a versatile device that is well suited for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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