Allicdata Part #: | IRG8CH29K10F-ND |
Manufacturer Part#: |
IRG8CH29K10F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT 1200V ULTRA FAST DIE |
More Detail: | IGBT 1200V Surface Mount Die |
DataSheet: | IRG8CH29K10F Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 25A |
Switching Energy: | -- |
Input Type: | Standard |
Gate Charge: | 160nC |
Td (on/off) @ 25°C: | 40ns/245ns |
Test Condition: | 600V, 25A, 10 Ohm, 15V |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
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Introduction
The IRG8CH29K10F is the latest in a family of single power IGBTs from Infineon. It is a single IGBT device with a current capability of 10A, and is designed for use in various applications from motor control to electrical power conversion and switching. It has a cut-off voltage of 600V and a maximum RMS collector-emitter voltage of 800V. This device is also designed for use in high voltage and high frequency applications.
Application Field
The IRG8CH29K10F is suitable for a wide range of applications, including motor control and power conversion. It is ideal for use in air-conditioners, refrigerators and other household appliances, AC inverters, welding machines and industrial power supplies. It can also be used as a high voltage switch in industrial and automotive applications such as HVAC switchgear and lighting control circuits.
Working Principle
The IRG8CH29K10F is an IGBT device, which stands for “insulated gate bipolar transistor.” An IGBT is a three electrode device that acts as a switch for high voltage and current applications. In the on state, an IGBT operates like a conventional transistor, allowing current to flow through the collector and emitter when the gate voltage is applied. However, unlike a transistor, an IGBT does not rely on the flow of charge carriers to control the current in the switching element. Instead, it relies on a voltage turn-on and a negative voltage turn-off capability, with the negative voltage applied directly to the gate. As a result, it has a higher voltage and power capability than a standard transistor.
The IRG8CH29K10F has a low on-state voltage and high off-state voltage, making it ideal for high-power applications. It also has a fast response time, allowing it to switch quickly between on and off states. It has a low gate capacitance and a high peak current capability, making it an ideal choice for high power switching applications. Additionally, its wide range of operating temperatures make it suitable for a variety of environments.
Conclusion
The IRG8CH29K10F is a single IGBT device that is designed for use in various applications from motor control to electrical power conversion and switching. It has a cut-off voltage of 600V and a maximum RMS collector-emitter voltage of 800V. Its low on-state voltage and high off-state voltage make it ideal for high-power applications. It also has a low gate capacitance and a high peak current capability. Its wide range of operating temperatures make it suitable for a variety of environments and it is ideal for use in air-conditioners, refrigerators and other household appliances, AC inverters, welding machines and industrial power supplies.
The specific data is subject to PDF, and the above content is for reference
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