IRG8P25N120KD-EPBF Allicdata Electronics
Allicdata Part #:

IRG8P25N120KD-EPBF-ND

Manufacturer Part#:

IRG8P25N120KD-EPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V 40A 180W TO-247AD
More Detail: IGBT 1200V 40A 180W Through Hole TO-247AD
DataSheet: IRG8P25N120KD-EPBF datasheetIRG8P25N120KD-EPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 800µJ (on), 900µJ (off)
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 70ns
Test Condition: 600V, 15A, 10 Ohm, 15V
Td (on/off) @ 25°C: 20ns/170ns
Gate Charge: 135nC
Input Type: Standard
Series: --
Power - Max: 180W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Current - Collector Pulsed (Icm): 45A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

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The IRG8P25N120KD-EPBF is an insulated gate bipolar transistor (IGBT) module developed by International Rectifier. The company\'s IRG series are structurally augmented IGBTs which provide superior performance at high frequencies. This module is capable of handling continuous current ratings up to 12A and can operate at frequency of up to 6000V/us. With its broad range of features, it has a variety of applications, including motor control and power conversion.

Application Fields

The IRG8P25N120KD-EPBF is primarily used in industrial motor control and power conversion. Thanks to its improved switching performance, it is suitable for high-frequency systems, such as drive speed controls, inverter-fed motor applications, high-power LED lighting and welding applications. It is also used in high-efficiency automotive systems, including electric vehicles and hybrid electric vehicles. Other common applications include induction heating, HVAC systems, home appliance control, uninterruptible power supplies and photovoltaic systems.

Working Principle

The IRG8P25N120KD-EPBF works by controlling the flow of current through two transistors that are connected in anti-parallel, known as the "coupled transistors". It is a voltage-controlled device, meaning that the amount of current flowing through the transistors is determined by the amount of voltage applied to the gate terminal. The device is designed to provide optimum performance at high frequencies and reduce the amount of power losses.

In addition to its improved switching performance, the IRG8P25N120KD-EPBF also offers low gate resistance and low gate-source/drain capacitance. This helps to reduce the amount of switching losses and minimize the amount of ringing current. In addition, the module features improved thermal cycling performance, which helps to reduce the need for cooling fans and reduces the amount of energy necessary to operate the device.

Overall, the IRG8P25N120KD-EPBF is a versatile IGBT module that offers improved performance at high frequencies and allows for a variety of applications. It is a reliable device for motor control and power conversion, and offers low gate resistance, low gate-source/drain capacitance and improved thermal cycling performance.

The specific data is subject to PDF, and the above content is for reference

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