| Allicdata Part #: | IRG8P25N120KD-EPBF-ND |
| Manufacturer Part#: |
IRG8P25N120KD-EPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IGBT 1200V 40A 180W TO-247AD |
| More Detail: | IGBT 1200V 40A 180W Through Hole TO-247AD |
| DataSheet: | IRG8P25N120KD-EPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Switching Energy: | 800µJ (on), 900µJ (off) |
| Supplier Device Package: | TO-247AD |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Reverse Recovery Time (trr): | 70ns |
| Test Condition: | 600V, 15A, 10 Ohm, 15V |
| Td (on/off) @ 25°C: | 20ns/170ns |
| Gate Charge: | 135nC |
| Input Type: | Standard |
| Series: | -- |
| Power - Max: | 180W |
| Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 15A |
| Current - Collector Pulsed (Icm): | 45A |
| Current - Collector (Ic) (Max): | 40A |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| IGBT Type: | -- |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRG8P25N120KD-EPBF is an insulated gate bipolar transistor (IGBT) module developed by International Rectifier. The company\'s IRG series are structurally augmented IGBTs which provide superior performance at high frequencies. This module is capable of handling continuous current ratings up to 12A and can operate at frequency of up to 6000V/us. With its broad range of features, it has a variety of applications, including motor control and power conversion.
Application Fields
The IRG8P25N120KD-EPBF is primarily used in industrial motor control and power conversion. Thanks to its improved switching performance, it is suitable for high-frequency systems, such as drive speed controls, inverter-fed motor applications, high-power LED lighting and welding applications. It is also used in high-efficiency automotive systems, including electric vehicles and hybrid electric vehicles. Other common applications include induction heating, HVAC systems, home appliance control, uninterruptible power supplies and photovoltaic systems.
Working Principle
The IRG8P25N120KD-EPBF works by controlling the flow of current through two transistors that are connected in anti-parallel, known as the "coupled transistors". It is a voltage-controlled device, meaning that the amount of current flowing through the transistors is determined by the amount of voltage applied to the gate terminal. The device is designed to provide optimum performance at high frequencies and reduce the amount of power losses.
In addition to its improved switching performance, the IRG8P25N120KD-EPBF also offers low gate resistance and low gate-source/drain capacitance. This helps to reduce the amount of switching losses and minimize the amount of ringing current. In addition, the module features improved thermal cycling performance, which helps to reduce the need for cooling fans and reduces the amount of energy necessary to operate the device.
Overall, the IRG8P25N120KD-EPBF is a versatile IGBT module that offers improved performance at high frequencies and allows for a variety of applications. It is a reliable device for motor control and power conversion, and offers low gate resistance, low gate-source/drain capacitance and improved thermal cycling performance.
The specific data is subject to PDF, and the above content is for reference
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IRG8P25N120KD-EPBF Datasheet/PDF