Series:	--
Packaging:	Bulk
Part Status:	Obsolete
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	1200V
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 5A
Switching Energy:	--
Input Type:	Standard
Gate Charge:	30nC
Td (on/off) @ 25°C:	20ns/160ns
Test Condition:	600V, 5A, 47 Ohm, 15V
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	Die
Supplier Device Package:	Die

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IRG8CH10K10F Application Field and Working Principle

Introduction

The IRG8CH10K10F is an Insulated Gate Bipolar Transistor, or IGBT. It is a large scale integrated power transistor module, designed specifically to deliver high current, high speed switching performance and resistance to high temperature operation. This module has many important applications in a variety of industries, such as automotive, sensing and actuating, solar inverters and industrial motor drives.

Features and Applications

The IRG8CH10K10F features a built-in suppression diode, and performance optimized geometry for a switching frequency of up to 30kHz. It also has a wide safe operating area (SOA) with high saturation current ratings up to 10A.The IRG8CH10K10F is capable of switching high-current, high-power applications with high-speed operation, making it ideal for automotive, industrial motor drive, power supply and solar inverters. It is also suitable for general purpose switching operations, including high-voltage, high-current applications such as automotive starters, electric heating elements and HID lighting systems. The IRG8CH10K10F is also suitable for visual signal applications, such as LED driver panels, LCD display backlighting and signal control. It is suitable for portable applications including DC-DC converters and AC-DC adapters, and can be used in a variety of applications such as home automation and access control.

Working Principle

IGBTs (Insulated Gate Bipolar Transistors) work on the principle of both bipolar junction transistors and insulated-gate field-effect transistors (IGFETs). They can switch either current or voltage with high speed, making them an increasingly popular choice for reliable, relatively high-powered switching operations.In an IGBT power module such as the IRG8CH10K10F, a conductive channel exists between the collector and the emitter of the device. The presence of a dielectric insulated gate (IG) between the two allows the current to flow through the module, while the voltage drop across the gate is what determines the current flow.When a voltage is applied to the gate of the IRG8CH10K10F, the current will flow through the device’s collector-emitter channel. If a negative voltage is applied to the gate, then the current will be switched off, and power is cut off from the device.

Conclusion

The IRG8CH10K10F is an Insulated Gate Bipolar Transistor, or IGBT. It features a built-in suppression diode, performance optimized geometry and a wide safe operating area. It is capable of switching high-current, high-power applications with high-speed operation, making it suitable for automotive, industrial motor drives, power supplies and solar inverters. It is also suitable for visual signal applications, portable applications including DC-DC converters and AC-DC adapters, and home automation and access control.The IRG8CH10K10F works on the principle of both bipolar junction transistors and insulated-gate field-effect transistors (IGFETs). When a voltage is applied to the gate of the device, the current will flow through the device’s collector-emitter channel. If a negative voltage is applied to the gate, then the current will be switched off, and power is cut off from the device. This makes the IRG8CH10K10F a highly reliable, high-powered IGBT suitable for a variety of applications.

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