IRG8P25N120KDPBF

Switching Energy:	800µJ (on), 900µJ (off)
Supplier Device Package:	TO-247AC
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	70ns
Test Condition:	600V, 15A, 10 Ohm, 15V
Td (on/off) @ 25°C:	20ns/170ns
Gate Charge:	135nC
Input Type:	Standard
Series:	--
Power - Max:	180W
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 15A
Current - Collector Pulsed (Icm):	45A
Current - Collector (Ic) (Max):	40A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	--
Part Status:	Obsolete
Packaging:	Tube

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Introduction

IRG8P25N120KDPBF is a new IGBT module from Infineon Technologies. It is a 1200V IRG8P25N120KDPBF Integrating an N-Channel IGBT and IntePADTM. This module offers excellent electrical characteristics such as high switching frequency, low conduction losses and high voltage capability.

Application Field

The IRG8P25N120KDPBF is an ideal solution for a variety of applications, notably renewable energy and industrial systems, such as inverters, motor drives and welding. The module also has applications in other areas such as UPS, solar inverters, induction heating, high voltage SMPS., and many other industrial applications that require switching power.

Working Principle

The IRG8P25N120KDPBF features a low on-state voltage drop, very high switching speed and high energy density. The module consists of a control circuit integrated with an existing N-channel IGBT and a diode on a single chip. The driving of the IRG8P25N120KDPBF is based on the principle of the inverted voltage. For a high voltage, the application of a low voltage to the gate is able to polarize the IGBT in the conductive state, which allow for a high frequency switching. The IGBT can then control the switching of electrical power. The diode part of the module is also important as it provides protection against current surge and protects electricity sensitive components. The integrated protection circuit prevents both the IGBT and the diode from being damaged due to over voltage, over current and temperature conditions. This will help to ensure the safe and optimal operation of the module.

Conclusion

The IRG8P25N120KDFB is an IGBT module that provides a high degree of performance at low cost. The module is suitable for a wide range of applications such as renewable energy and industrial systems, UPS, solar inverters, induction heating and high voltage SMPSs. It has an integrated protection circuit and features a low on-state voltage drop, a fast switching speed and a high energy density. The operation of the IRG8P25N120KDPBF is based on the inverted voltage principle, using a gate voltage to control the switching of the IGBT. The diode part of the module provides protection against current surges and protects electricity sensitive components.

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