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IRGP4790-EPBF Application Field and Working Principle

The IRGP4790-EPBF is an insulated gate bipolar transistor (IGBT) product from IRF which is used for various applications including motor control and power conversion. The IRGP4790-EPBF is a single IGBT product which has a maximum collector current of 47 A at 25°C, a collector emitter voltage rating of 1200 V, and a junction temperature rating of 175°C.

Features

• Excellent switching capability
• High speed switching
• High input impedance
• Low on-state voltage
• Low EMI/RFI generation
• Low surface mount profile

Application Field

The IRGP4790-EPBF is suitable for high-speed switching, freewheeling, resonant switching, and hard switching applications. It is designed for excellent performance in applications such as inverters, motor control, uninterruptible power supplies, traction, and industrial automation. It is also suitable for welding, lamp control, and solid-state relay applications due to its ability to handle high currents.

Working Principle

The working principle of the IRGP4790-EPBF is based on the operation of an insulated gate bipolar transistor (IGBT). An IGBT is a type of transistor that combines the low input impedance and high switching speeds of a metal oxide semiconductor (MOSFET) with the high current and voltage ratings of a bipolar junction transistor (BJT). This combination makes the IGBT ideal for power switching applications, as it can carry high current and quickly turn the current on and off.The IRGP4790-EPBF has an internal absorption diode that creates a pathway for the current to flow when the IGBT is off, enabling the device to quickly turn on. When the IGBT is turned on, a portion of the current will flow through the base of the transistor, allowing the collector current to flow. The collector current is controlled by the gate voltage, and the device will turn off when the gate voltage is removed.

Conclusion

The IRGP4790-EPBF is a single IGBT product that is suitable for applications such as motor control, power conversion, welding, and lamp control. It offers excellent switching capability, high speed switching, and low EMI/RFI generation. The device is based on the working principle of an IGBT, which combines the low input impedance and high switching speeds of a MOSFET with the high current and voltage ratings of a BJT.

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