IRGP6650D-EPBF Allicdata Electronics
Allicdata Part #:

IRGP6650D-EPBF-ND

Manufacturer Part#:

IRGP6650D-EPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 50A TO247AD
More Detail: IGBT 600V 80A 306W Through Hole TO-247AD
DataSheet: IRGP6650D-EPBF datasheetIRGP6650D-EPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 300µJ (on), 630µJ (off)
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 50ns
Test Condition: 400V, 35A, 10 Ohm, 15V
Td (on/off) @ 25°C: 40ns/105ns
Gate Charge: 75nC
Input Type: Standard
Series: --
Power - Max: 306W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 35A
Current - Collector Pulsed (Icm): 105A
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

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IRGP6650D-EPBF application field and working principle

IRGP6650D-EPBF (also known as a Insulated Gate Bipolar Transistor, or IGBT) is a semiconductor device used as a voltage switch.

The IRGP6650D-EPBF IGBT is a great option for many medium-power applications, including automotive, motor control, circuit breakers, variable frequency drives, server and power supply systems, given its low gate charge and low switching losses.

An IRGP6650D-EPBF IGBT is a three-terminal device, consisting of two base terminals named the “gate” and “emitter”, and a collector terminal. The gate terminal is used to control the electric current that flows between the emitter and the collector by applying a voltage to the gate terminal.

Application Field

IBGTs are commonly used as switches, where they can be used to regulate and control the flow of power in a variety of systems, including industrial equipment, consumer devices, automotive applications, electronic circuits, and more.

The IRGP6650D-EPBF IGBT is especially well-suited for applications that require high power handling capabilities, such as motor drives and power converters, as well as applications that require low switching losses, such as automotive electronics and high frequency power supplies. Additionally, this IGBT is well-suited for low-voltage applications, as it can operate at voltages as low as 15V.

Functional Principle

The IRGP6650D-EPBF IGBT operates through the combination of both the PIN diode effect and the Bipolar Transistor effect.

When the gate-to-emitter voltage is increased, electrons that have been injected from the n+-region into the p- type layer are polarized, creating a low resistance path between the gate and emitter. This causes current to flow from the emitter to the collector and the device turns on.

A reverse-bias voltage is then applied to the emitter-collector junction, allowing control of the collector current through the gate electrode. When the gate-to-emitter voltage is decreased, current stops flowing through the device and the device turns off.

Conclusion

The IRGP6650D-EPBF IGBT is an ideal choice for many medium-power applications requiring low switching losses and good power handling capabilities. This IGBT device is well-suited for low-voltage applications, where it can operate at voltages as low as 15V.IGBTs are commonly used as switches, where they can be used to regulate and control the flow of power in a variety of systems, including industrial equipment, consumer devices, automotive applications, electronic circuits, and more.

The specific data is subject to PDF, and the above content is for reference

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