IRGP4760D-EPBF Allicdata Electronics
Allicdata Part #:

IRGP4760D-EPBF-ND

Manufacturer Part#:

IRGP4760D-EPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 650V TO-247
More Detail: IGBT 650V 90A 325W Through Hole TO-247AD
DataSheet: IRGP4760D-EPBF datasheetIRGP4760D-EPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Switching Energy: 1.7mJ (on), 1mJ (off)
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 170ns
Test Condition: 400V, 48A, 10 Ohm, 15V
Td (on/off) @ 25°C: 70ns/140ns
Gate Charge: 145nC
Input Type: Standard
Series: --
Power - Max: 325W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A
Current - Collector Pulsed (Icm): 144A
Current - Collector (Ic) (Max): 90A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

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IGBTs (Insulated-Gate Bipolar Transistors) are widely used in various applications, such as motor drives and renewable energy systems. The IRGP4760D-EPBF is a single-channel IGBT presents superior performance in a low voltage, low power rating. The device has a high blocking voltage rating of 600V and a maximum output current of 47A, making it suitable for high power applications. Additionally, the 1200V di/dt rating and improved thermal efficiency will make the IRGP4760D-EPBF a good choice for high efficiency designs.

This device has a built-in Zero Cross mechanism so that it can be turned on and off at the zero-crossing point of the alternating current cycle. This is beneficial for minimizing switching losses, enabling improved power efficiency. It also features optimized body diode characteristics and improved avalanche capability, allowing for faster switching operation and better power conversion efficiency. The device comes with a termination clip for easier connection to other components and systems.

The working principle of this device is based on its structure. It is constructed with two vertical N-channel MOSFETs and one horizontal P+ layer IGBT, connected in a reverse-connected half-bridge configuration. The N-channel MOSFETs act as the driving element and the IGBT as the main load carrying element. When the N-channel MOSFETs are turned on, they will drive current through the IGBT, which is then converted into a load current through the load. By controlling the voltage and current between the drain and source, the IGBT can be switched on and off.

The IRGP4760D-EPBF can be used in a wide range of applications, especially for high power switching or motor-drive designs. For high efficiency systems, this device can offer superior performance due to its Zero Cross mechanism and improved thermal efficiency. Additionally, its 1200V di/dt and high blocking voltage ratings make the device suitable for high power and high voltage applications. This device is also designed to be highly reliable and offers 6KV ESD protection, making it suitable for industrial applications with heavy EMI/RFI conditions.

The specific data is subject to PDF, and the above content is for reference

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