IRGP4640D-EPBF Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRGP4640D-EPBF is a single IGBT that is primarily used for high power applications. It is a 3-phase ±15 kV/20 A IGBT module with a tolerance of maximum 600 V and reverse blocking. Its features make it an ideal choice for medium-to-high frequency applications such as inverters, wind turbine, grid connected converters and DC-AC or AC-AC converters. It also has wide application fields in solar and renewable energy, motor drive, and motor control.

The IRGP4640D-EPBF is built with a molecular structure which is split into two parts – N-channel MOSFET and P-channel MOSFET. Both of these components are connected in parallel with two terminals that can be used to control the gate voltage of the IGBT. The gate voltage is then turned on or off depending on the condition in order to switch the current passing through the IGBT.

The N-channel MOSFET is used to turn on the IGBT, while the P-channel MOSFET is used to turn off the IGBT. It is also known as an "opposed-channel" structure. This structure ensures higher efficiency and faster response times compared to traditional IGBTs.

To control the gate voltage, the IGBT uses a Gate Driver (GD), which is designed to drive the gate voltage of the IGBT and ensure that the IGBT turns on or off when it is commanded to. In most cases, the GD is powered by a 12V or 24V power supply. The GD then uses a current source to drive the IGBT.

The IRGP4640D-EPBF also includes a temperature-controlled package for improved performance. It also includes a built-in diode which protects the IGBT from hazardous voltage surges. The diode acts as a clamp and helps to reduce the amount of turn-on losses in IGBTs when a surge occurs.

The main advantage of using this IGBT is that it can support high voltage levels without compromising its reliability. This means that it is suitable for applications with high current levels, where other IGBTs may be prone to failure. It also offers improved power efficiency due to its high current capability, which makes it ideal for applications that require high module output power.

In conclusion, the IRGP4640D-EPBF is a single IGBT which is suitable for high power applications. It is characterized by a molecular structure which helps to ensure higher efficiency and faster response times. It also includes a built-in diode which protects the IGBT from hazardous voltage surges. The main advantage of using this IGBT is that it can support high voltage levels without compromising its reliability, which makes it ideal for applications that require high module output power.

The specific data is subject to PDF, and the above content is for reference