IRGP4750DPBF Allicdata Electronics
Allicdata Part #:

IRGP4750DPBF-ND

Manufacturer Part#:

IRGP4750DPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 650V TO-247
More Detail: IGBT 650V 70A 273W Through Hole TO-247AC
DataSheet: IRGP4750DPBF datasheetIRGP4750DPBF Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Last Time Buy
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 70A
Current - Collector Pulsed (Icm): 105A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Power - Max: 273W
Switching Energy: 1.3mJ (on), 500µJ (off)
Input Type: Standard
Gate Charge: 105nC
Td (on/off) @ 25°C: 50ns/105ns
Test Condition: 400V, 35A, 10 Ohm, 15V
Reverse Recovery Time (trr): 150ns
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Description

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Using Insulated-gate bipolar transistors (IGBT) has become a preferred alternative to the traditional thyristor and MOSFET switches in industrial power control applications due to their lower on-state voltage drop, higher switching frequency range and a significantly larger current carrying capacity. IRGP4750DPBF is a perfect example of this type of switch. The application field and working principle of this device will be explained in the following sections.

Application Field

IRGP4750DPBF belongs to IGBT family and it is designed for use in motor control, power conversion, and power supplies. The device is suitable for high frequency DC to AC applications. It can also be used in AC and DC line-commutated motor drives, UPS, inverters, and battery chargers. Because of its full-rated current and a wide operating range, it can process large currents and has high power capability.

Working Principle

IGBTs are similar to MOSFETs but they have a lower cost and more effective current control and current carrying capacity. They also operate more efficiently at higher frequencies and switching speeds. The IRGP4750DPBF is a 6A, 1000V IGBT and it works on a simple principle. It is made up of an N-type MOS and a P-type bipolar junction transistor. The PN-junction between the two makes the device conductive and enables current to flow through it. The IGBT is triggered by an external gate voltage and its collector current is directly related to the voltage difference between the collector and the gate.

When a gate voltage is applied to the IGBT, the conduction between the collector and the emitter is enhanced. This gate voltage increases the current flowing downward from collector to emitter. On the other hand, when the gate voltage is decreased, then conduction between the collector and the emitter is reduced and the current flowing between the collector and emitter is decreased. This is the working principle of IRGP4750DPBF.

Conclusion

IRGP4750DPBF is one of the most popular single IGBTs used in industrial power control applications. It has a low on-state voltage drop, high switching frequency range, and a large current carrying capacity. The device is suitable for applications such as motor control, power conversion, power supplies and line-commutated motor drives. IRGP4750DPBF works on a simple principle: it is triggered by an external gate voltage and its collector current is directly related to the voltage difference between the collector and the gate.

The specific data is subject to PDF, and the above content is for reference

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