IRGP30B60KD-EP Allicdata Electronics
Allicdata Part #:

IRGP30B60KD-EP-ND

Manufacturer Part#:

IRGP30B60KD-EP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 600V 60A 304W TO247AD
More Detail: IGBT NPT 600V 60A 304W Through Hole TO-247AD
DataSheet: IRGP30B60KD-EP datasheetIRGP30B60KD-EP Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 304W
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 125ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C: 46ns/185ns
Gate Charge: 102nC
Input Type: Standard
Switching Energy: 350µJ (on), 825µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Not For New Designs
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The IRGP30B60KD-EP is a very versatile and popular device used in a wide range of applications. It is a Power MOSFET with a single-ended gate drive and is capable of both high-speed switching and low-level signal handling.The IRGP30B60KD-EP is part of the International Rectifier (IR) 600V PowerTrench™ MOSFET series which enables it to deliver very high efficiency in typical power conversion applications. The device offers high power density, extremely low Qg and fast switching performance, high saturation voltage characteristics, and a wide range of threshold gate drives (Vgs) which makes it suitable for a variety of applications that require high efficiency and low switching losses.The IRGP30B60KD-EP is a high-speed, full-wave rectifier MOSFET with a total switching speed of 520V/μs and a typical switching speed of 390V/μs. The device is capable of seamlessly transitioning from conduction to an off state in just a few nanoseconds. This makes it ideal for demanding RF and power applications.The IRGP30B60KD-EP has an integrated gate-threshold voltage of 6V and an internal gate-source breakdown voltage (Vgs) of 4.5V. It also has an adjustable on-resistance from 0.87 to 0.5nΩ. This makes it highly suitable for use in applications such as hard-switched DC-DC converters, AC-DC converter control, high-side drivers and fast switching power supplies.The working principle of the IRGP30B60KD-EP is relatively simple. When the gate is sent a high voltage signal, it acts as a switch and connects the source to the drain. This allows current to flow from the source to the drain as long as the voltage differential between the source and the drain is high enough. When the gate voltage falls below the threshold voltage, the device switches off and stops current from flowing from the source to the drain.The IRGP30B60KD-EP is capable of high power conversion efficiency and is also well suited for use with microcontrollers and other low power control devices. It is also suitable for use in a wide variety of industrial and commercial applications.In conclusion, the IRGP30B60KD-EP is a highly versatile and popular device that can be used in a wide variety of applications. Its ability to deliver high power conversion efficiency, its fast switching performance, low Qg and adjustable on-resistance makes it an ideal choice for power converters, high-side drivers, fast switching power supplies and other high-reliability applications.

The specific data is subject to PDF, and the above content is for reference

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